型号 功能描述 生产厂家 企业 LOGO 操作
IDT71V35761YSA200BG

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c

IDT

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c

IDT

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c

IDT

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c

IDT

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c

IDT

IDT71V35761YSA200BG产品属性

  • 类型

    描述

  • 型号

    IDT71V35761YSA200BG

  • 功能描述

    IC SRAM 4MBIT 200MHZ 119BGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    2,000

  • 系列

    MoBL® 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 异步

  • 存储容量

    16M(2M x 8,1M x 16)

  • 速度

    45ns

  • 接口

    并联

  • 电源电压

    2.2 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-VFBGA

  • 供应商设备封装

    48-VFBGA(6x8)

  • 包装

    带卷(TR)

更新时间:2025-11-3 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
23+
BGA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IDT
25+
BGA
2987
绝对全新原装现货供应!
IDT, Integrated Device Techno
23+
165-CABGA13x15
7300
专注配单,只做原装进口现货
IDT
25+
QFP
680
原装现货热卖中,提供一站式真芯服务
IDT
1923+
BGAQFP
488
原盒原包装只有原装假一罚十价优!
IDT
23+
NA
1218
原装正品代理渠道价格优势
idt
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
IDT
25+
TQFP=
2300
绝对原装自家现货!真实库存!欢迎来电!
IDT
23+
165-CABGA(13x15)
71890
专业分销产品!原装正品!价格优势!
IDT
24+
QFP
56

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