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型号 功能描述 生产厂家 企业 LOGO 操作
IDT71V35761YSA166BQI

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c

IDT

IDT71V35761YSA166BQI

封装/外壳:165-TBGA 包装:托盘 描述:IC SRAM 4.5MBIT PAR 165CABGA 集成电路(IC) 存储器

RENESAS

瑞萨

IDT71V35761YSA166BQI

IC SRAM 4.5M PARALLEL 165CABGA

RENESAS

瑞萨

封装/外壳:165-TBGA 包装:托盘 描述:IC SRAM 4.5MBIT PAR 165CABGA 集成电路(IC) 存储器

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c

IDT

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c

IDT

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c

IDT

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c

IDT

IDT71V35761YSA166BQI产品属性

  • 类型

    描述

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步

  • 存储容量:

    4.5Mb (128K x 36)

  • 时钟频率:

    166MHz

  • 访问时间:

    3.5ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    3.135V ~ 3.465V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    165-TBGA

  • 供应商器件封装:

    165-CABGA(13x15)

更新时间:2026-7-27 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
DIP
75
INF
25+
QFP
3200
全新原装、诚信经营、公司现货销售
Infineon/英飞凌
24+
TO-220
30000
只做原装正品现货 欢迎来电查询15919825718
INF
26+
标准封装
890000
一级总代理商原厂原装大批量现货 一站式服务
PAN
16+
SOT-23
10000
进口原装现货/价格优势!
RENESAS(瑞萨)/IDT
24+
165-CABGA (13x15)
18000
存储器 > 静态随机存取存储器(SRAM)
INFINEON
9
TO220-2
691
全新 发货1-2天
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
INFINEON
22+
TO-220
20000
IDT
22+
165CABGA (13x15)
9000
原厂渠道,现货配单

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