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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V35761S200BQG | 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：972.44 Kbytes Page：21 Pages | IDT |   | |
IDT71V35761S200BQG | 封装/外壳：165-TBGA 包装：托盘 描述：IC SRAM 4.5MBIT PAR 165CABGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
IDT71V35761S200BQG | IC SRAM 4.5M PARALLEL 165CABGA | RENESAS 瑞萨 | | |
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：972.44 Kbytes Page：21 Pages | IDT | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：972.44 Kbytes Page：21 Pages | IDT | | ||
封装/外壳：165-TBGA 包装：托盘 描述：IC SRAM 4.5MBIT PAR 165CABGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
IC SRAM 4.5M PARALLEL 165CABGA | RENESAS 瑞萨 | | ||
IC SRAM 4.5M PARALLEL 165CABGA | RENESAS 瑞萨 | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：972.44 Kbytes Page：21 Pages | IDT | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c | IDT | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c | IDT | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：972.44 Kbytes Page：21 Pages | IDT | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：972.44 Kbytes Page：21 Pages | IDT | | ||
128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ 128K x 36 memory configurations ◆ Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ 3.3V core power supply | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas Electronics Corporatio |
18500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
|||||
IDT |
23+ |
165-CABGA(13x15) |
1389 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
24+ |
QFP |
3423 |
||||
IDT, Integrated Device Techno |
23+ |
165-CABGA13x15 |
7300 |
专注配单,只做原装进口现货 |
|||
IDT, Integrated Device Technol |
21+ |
172-LFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
IDT |
25+ |
LQFP |
1500 |
原装现货热卖中,提供一站式真芯服务 |
|||
Renesas |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
IDT |
22+ |
165CABGA (13x15) |
9000 |
原厂渠道,现货配单 |
|||
IDT, Integrated Device Technol |
24+ |
165-CABGA(13x15) |
56200 |
一级代理/放心采购 |
|||
IDT |
16+ |
TQFP100 |
8800 |
进口原装大量现货热卖中 |
IDT71V35761S200BQG芯片相关品牌
IDT71V35761S200BQG规格书下载地址
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DdatasheetPDF页码索引
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