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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V2576YSA133BQ | 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 文件：282.48 Kbytes Page：22 Pages | IDT |   | |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 文件：282.48 Kbytes Page：22 Pages | IDT | | ||
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
20+ |
TQFP1420-100 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
IDT |
25+23+ |
TQFP100 |
24249 |
绝对原装正品全新进口深圳现货 |
|||
IDT |
25+ |
QFP |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IDT |
2450+ |
QFP |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IDT |
23+ |
QFP |
3600 |
绝对全新原装!现货!特价!请放心订购! |
|||
IDT |
23+ |
NA |
1218 |
原装正品代理渠道价格优势 |
|||
IDT |
2023+ |
TSOP |
50000 |
原装现货 |
|||
IDT |
23+ |
TQFP100 |
8400 |
专注配单,只做原装进口现货 |
|||
IDT |
25+ |
QFP100 |
9630 |
我们只做原装正品现货!量大价优! |
|||
IDT |
TQFP100 |
22+ |
6000 |
十年配单,只做原装 |
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IDT71V2576YSA133BQ规格书下载地址
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DdatasheetPDF页码索引
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