封装/外壳：28-TSSOP（0.465"，11.80mm 宽） 包装：卷带（TR） 描述：IC SRAM 256KBIT PARALLEL 28TSOP 集成电路（IC） 存储器

封装/外壳：28-TSSOP（0.465"，11.80mm 宽） 包装：卷带（TR） 描述：IC SRAM 256KBIT PARALLEL 28TSOP 集成电路（IC） 存储器

LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)

DESCRIPTION The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. FEATURES • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

Lower Power 3.3V CMOS Fast SRAM

文件：592.58 Kbytes Page：8 Pages

Lower Power 3.3V CMOS Fast SRAM

文件：592.58 Kbytes Page：8 Pages