封装/外壳：28-BSOJ（0.300"，7.62mm 宽） 包装：管件 描述：IC SRAM 256KBIT PARALLEL 28SOJ 集成电路（IC） 存储器

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

文件：478.03 Kbytes Page：8 Pages

封装/外壳：28-BSOJ（0.300"，7.62mm 宽） 包装：卷带（TR） 描述：IC SRAM 256KBIT PARALLEL 28SOJ 集成电路（IC） 存储器

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

文件：478.03 Kbytes Page：8 Pages

LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)

DESCRIPTION The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. FEATURES • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)

DESCRIPTION The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. FEATURES • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)

DESCRIPTION The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. FEATURES • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C)