型号 功能描述 生产厂家&企业 LOGO 操作
IDT71024S

CMOSStaticRAM1Meg(128Kx8-Bit)TwoChipSelectsplusoneOutputEnablepin

Description TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.Itisfabricatedusinghigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-spe

IDT

Integrated Device Technology, Inc.

IDT
IDT71024S

CMOSStaticRAM1Meg(128Kx8-Bit)

文件:254.17 Kbytes Page:8 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSStaticRAM1Meg(128Kx8-Bit)TwoChipSelectsplusoneOutputEnablepin

Description TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.Itisfabricatedusinghigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-spe

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSStaticRAM1Meg(128Kx8-Bit)

Description TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.Itisfabricatedusinghigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-spe

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSStaticRAM1Meg(128Kx8-Bit)

Description TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.Itisfabricatedusinghigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-spe

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shighperformance,high-reliabilityCMOStechnology.Thisstateof-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhig

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bitmedium-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bitmedium-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT

CMOSSTATICRAM1MEG(128Kx8-BIT)

DESCRIPTION: TheIDT71024isa1,048,576-bitmedium-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT

CMOSStaticRAM1Meg(128Kx8-Bit)TwoChipSelectsplusoneOutputEnablepin

Description TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.Itisfabricatedusinghigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-spe

IDT

Integrated Device Technology, Inc.

IDT

封装/外壳:32-BSOJ(0.300",7.62mm 宽) 包装:卷带(TR) 描述:IC SRAM 1MBIT PARALLEL 32SOJ 集成电路(IC) 存储器

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:32-BSOJ(0.300",7.62mm 宽) 包装:卷带(TR) 描述:IC SRAM 1MBIT PARALLEL 32SOJ 集成电路(IC) 存储器

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM1Meg(128Kx8-Bit)

文件:254.17 Kbytes Page:8 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

CMOSStaticRAM1Meg(128Kx8-Bit)

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆Commercial(0°Cto+70°C),Industrial(–40°Cto+85°C) ◆Equalaccessandcycletimes —CommercialandIndustrial:12/15/20ns ◆TwoChipSelectsplusoneOutputEnablepin ◆Bidirectionalinputsandoutputsdirectly TTL-compatible ◆

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

DuraTorsionInsertandPowerBits

文件:346.48 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

64Kx241.5MbAsynchronousSRAM

文件:278.71 Kbytes Page:13 Pages

GSI

GSI Technology

GSI

IDT71024S产品属性

  • 类型

    描述

  • 型号

    IDT71024S

  • 功能描述

    IC SRAM 1MBIT 12NS 32SOJ

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 产品变化通告

    Product Discontinuation 26/Apr/2010

  • 标准包装

    136

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步,DDR II

  • 存储容量

    18M(1M x 18)

  • 速度

    200MHz

  • 接口

    并联

  • 电源电压

    1.7 V ~ 1.9 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    165-TBGA

  • 供应商设备封装

    165-CABGA(13x15)

  • 包装

    托盘

  • 其它名称

    71P71804S200BQ

更新时间:2024-9-23 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
2016+
SOJ32
9000
只做原装,假一罚十,公司可开17%增值税发票!
IDT
23+
SOZ
20000
全新原装假一赔十
IDT
2020+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
IDT(Renesas收购)
23+
NA/
8735
原厂直销,现货供应,账期支持!
KOREA
23+
SOP
20000
原厂原装正品现货
IDT
24+
SOJ32
100
大批量供应优势库存热卖
IDT
98+
SOJ32
470
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IDT
22+
SOP
7500
只做原装正品假一赔十!正规渠道订货!
IDT
2020+
SOJ
16800
绝对原装进口现货,假一赔十,价格优势!?
IDT
22+
SOJ32
6000
进口原装 假一罚十 现货

IDT71024S芯片相关品牌

  • AMPHENOL
  • CK-COMPONENTS
  • DDK
  • GLENAIR
  • MACOM
  • Mitsubishi
  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

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