CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS Static RAM 1 Meg (128K x 8-Bit) Two Chip Selects plus one Output Enable pin

Description The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-spe

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS Static RAM 1 Meg (128K x 8-Bit) Two Chip Selects plus one Output Enable pin

Description The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-spe

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS Static RAM 1 Meg (128K x 8-Bit)

Description The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-spe

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS Static RAM 1 Meg (128K x 8-Bit)

Description The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-spe

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit medium-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit medium-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71024 is a 1,048,576-bit medium-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

CMOS Static RAM 1 Meg (128K x 8-Bit) Two Chip Selects plus one Output Enable pin

Description The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-spe

封装/外壳：32-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器

CMOS Static RAM 1 Meg (128K x 8-Bit)

文件：254.17 Kbytes Page：8 Pages

封装/外壳：32-BSOJ（0.300"，7.62mm 宽） 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器

CMOS Static RAM 1 Meg (128K x 8-Bit)

文件：254.17 Kbytes Page：8 Pages

CMOS Static RAM 1 Meg (128K x 8-Bit)

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ Commercial (0°C to +70°C), Industrial (–40°C to +85°C) ◆ Equal access and cycle times — Commercial and Industrial: 12/15/20ns ◆ Two Chip Selects plus one Output Enable pin ◆ Bidirectional inputs and outputs directly TTL-compatible ◆

Dura Torsion Insert and Power Bits

文件：346.48 Kbytes Page：1 Pages

64K x 24 1.5Mb Asynchronous SRAM

文件：278.71 Kbytes Page：13 Pages