型号 功能描述 生产厂家 企业 LOGO 操作
IDT70V659S10BC

HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description The IDT70V659/58/57 is a high-speed 128/64/32K x 36 Asynchronous Dual-Port Static RAM. The IDT70V659/58/57 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTERSLAVE Dual-Por

IDT

IDT70V659S10BC

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description The IDT70V659/58/57 is a high-speed 128/64/32K x 36 Asynchronous Dual-Port Static RAM. The IDT70V659/58/57 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTERSLAVE Dual-Por

IDT

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description The IDT70V659/58/57 is a high-speed 128/64/32K x 36 Asynchronous Dual-Port Static RAM. The IDT70V659/58/57 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTERSLAVE Dual-Por

IDT

HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description The IDT70V659/58/57 is a high-speed 128/64/32K x 36 Asynchronous Dual-Port Static RAM. The IDT70V659/58/57 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTERSLAVE Dual-Por

IDT

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Features ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) ◆ Dual chip enables allow for depth expansion without external logic ◆ IDT70V659/58/57 easily expands data bus wi

RENESAS

瑞萨

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Features ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12ns (max.) ◆ Dual chip enables allow for depth expansion without external logic ◆ IDT70V659/58/57 easily expands data bus wi

RENESAS

瑞萨

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

文件:234.54 Kbytes Page:24 Pages

IDT

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

文件:200.22 Kbytes Page:24 Pages

IDT

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

文件:234.54 Kbytes Page:24 Pages

IDT

IDT70V659S10BC产品属性

  • 类型

    描述

  • 型号

    IDT70V659S10BC

  • 功能描述

    IC SRAM 4MBIT 10NS 256BGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    3,000

  • 系列

    - 格式 -

  • 存储器

    EEPROMs - 串行

  • 存储器类型

    EEPROM

  • 存储容量

    8K(1K x 8)

  • 速度

    400kHz

  • 接口

    I²C,2 线串口

  • 电源电压

    1.7 V ~ 5.5 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    8-SOIC(0.154,3.90mm 宽)

  • 供应商设备封装

    8-SOIC

  • 包装

    带卷(TR)

更新时间:2025-11-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
24+
NA/
3256
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IDT
23+
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23+
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8659
原装公司现货!原装正品价格优势.
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23+
256-CABGA(17x17)
73390
专业分销产品!原装正品!价格优势!
IDT
25+
MSOP8
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原厂直接发货进口原装
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22+
BGA
2000
原装正品现货
IDT
23+
QFP208
1500
原装正品代理渠道价格优势
IDT
23+
BGA
5000
原装正品,假一罚十

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