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IDT6129

CMOS STATIC RAM 256K (64K x 4-BIT)

DESCRIPTION: The lDT61298SA is a 262,144-bit high-speed static RAM organized as 64K x 4. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design echniques, provides a cost-effective approach for mem

IDT

IDT6129

CMOS STATIC RAM 256K (64K x 4-BIT)

RENESAS

瑞萨

CMOS STATIC RAM 256K (64K x 4-BIT)

DESCRIPTION: The lDT61298SA is a 262,144-bit high-speed static RAM organized as 64K x 4. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design echniques, provides a cost-effective approach for mem

IDT

CMOS STATIC RAM 256K (64K x 4-BIT)

DESCRIPTION: The lDT61298SA is a 262,144-bit high-speed static RAM organized as 64K x 4. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design echniques, provides a cost-effective approach for mem

IDT

CMOS STATIC RAM 256K (64K x 4-BIT)

DESCRIPTION: The lDT61298SA is a 262,144-bit high-speed static RAM organized as 64K x 4. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design echniques, provides a cost-effective approach for mem

IDT

CMOS STATIC RAM 256K (64K x 4-BIT)

DESCRIPTION: The lDT61298SA is a 262,144-bit high-speed static RAM organized as 64K x 4. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design echniques, provides a cost-effective approach for mem

IDT

CMOS Static RAM 256K (64K x 4-Bit)

文件:79.63 Kbytes Page:8 Pages

IDT

CMOS Static RAM 256K (64K x 4-Bit)

RENESAS

瑞萨

CMOS Static RAM 256K (64K x 4-Bit)

文件:79.63 Kbytes Page:8 Pages

IDT

CMOS Static RAM 256K (64K x 4-Bit)

文件:79.63 Kbytes Page:8 Pages

IDT

Reset IC with battery backup function

The BA6129AF, BA6162, and BA6162F are reset ICs with a battery backup function, designed for equipment using SRAMs and other similar components. These ICs are configured of a reset signal and CS signal output unit and a power supply switching unit. Features 1) Equipped with battery backup functi

ROHM

罗姆

Reset IC with battery backup function

The BA6129AF, BA6162, and BA6162F are reset ICs with a battery backup function, designed for equipment using SRAMs and other similar components. These ICs are configured of a reset signal and CS signal output unit and a power supply switching unit. Features 1) Equipped with battery backup functi

ROHM

罗姆

Silicon Power Rectifier Diode, 700 Amp

Features: ● High Power, Fast Recovery Time ● High Current Capability ● Low Forward Recovery Applications: ● Snubber Diode for GTO ● High Voltage Free–Wheeling Diode ● Fast Recovery Rectifier Applications

NTE

Ultra-Low-Power Series Voltage Reference

文件:556.43 Kbytes Page:15 Pages

MAXIM

美信

IDT6129产品属性

  • 类型

    描述

  • 型号

    IDT6129

  • 制造商

    IDT

  • 制造商全称

    Integrated Device Technology

  • 功能描述

    CMOS STATIC RAM 256K(64K x 4-BIT)

更新时间:2026-8-2 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
24+
SOJ28
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IDT
24+
SOJ28
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
IDT
25+
SOJ-28P
4500
全新原装、诚信经营、公司现货销售
IDT
24+
SOJ
109
IDT
25+
8
公司优势库存 热卖中!!
IDT
22+
SOJ28
20000
公司只做原装 品质保障
IDT
最新
SOJ
3000
绝对进口原装现货
IDT
2450+
SOJ
8850
只做原装正品假一赔十为客户做到零风险!!
xilinx
25+
SOJ28
6800
IDT
9730+
SOJ28
171
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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