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H5AN4G8NAFR-VKC中文资料

厂家型号

H5AN4G8NAFR-VKC

文件大小

725.21Kbytes

页面数量

45

功能描述

4Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

数据手册

下载地址一下载地址二到原厂下载

生产厂商

HYNIX

H5AN4G8NAFR-VKC数据手册规格书PDF详情

Description

The H5AN4G4NAFR-xxC, H5AN4G8NAFR-xxC and H5AN4G6NAFR-xxC are a 4Gb CMOS Double Data Rate

IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory

density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced

to both rising and falling edges of the clock. While all addresses and control inputs are latched on

the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are

sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

FEATURES

• VDD=VDDQ=1.2V +/- 0.06V

• Fully differential clock inputs (CK, CK) operation

• Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK  transition

• DM masks write data-in at the both rising and falling  edges of the data strobe

• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock

• Programmable CAS latency 9, 11, 12, 13, 14, 15, 16, 17, 18, 19 and 20

• Programmable additive latency 0, CL-1, and CL-2  supported (x4/x8 only)

• Programmable CAS Write latency (CWL) = 9, 10, 11, 12, 14, 16, 18

• Programmable burst length 4/8 with both nibble  sequential and interleave mode

• BL switch on the fly

• 16banks

• Average Refresh Cycle (Tcase of 0 oC~ 95 oC) - 7.8 μs at 0oC ~ 85 oC - 3.9 μs at 85oC ~ 95 oC

• JEDEC standard 78ball FBGA(x4/x8), 96ball FBGA(x16)

• Driver strength selected by MRS

• Dynamic On Die Termination supported

• Two Termination States such as RTT_PARK and RTT_NOM switchable by ODT pin

• Asynchronous RESET pin supported

• ZQ calibration supported

• TDQS (Termination Data Strobe) supported (x8 only)

• Write Levelization supported

• 8 bit pre-fetch

• This product in compliance with the RoHS directive.

• Internal Vref DQ level generation is available

• Write CRC is supported at all speed grades

• Maximum Power Saving Mode is supported

• TCAR(Temperature Controlled Auto Refresh) mode is supported

• LP ASR(Low Power Auto Self Refresh) mode is sup-ported

• Fine Granularity Refresh is supported

• Per DRAM Addressability is supported

• Geardown Mode(1/2 rate, 1/4 rate) is supported

• Programable Preamble for read and write is supported

• Self Refresh Abort is supported

• CA parity (Command/Address Parity) mode is sup-ported

• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or differentbank group accesses are available

• DBI(Data Bus Inversion) is supported(x8)

更新时间:2025-8-12 17:48:00
供应商 型号 品牌 批号 封装 库存 备注 价格
Hynix
1844+
FBGA
6528
只做原装正品假一赔十为客户做到零风险!!
HYNIX
23+
FBGA
15000
一级代理原装现货
HYNIX
24+
FBGA
20000
只做正品原装现货
HYNIX
21+
FBGA
62
原装现货假一赔十
SKHYNIX
2447
FBGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SKHYNIX
23+
FBGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
SK HYNIX
2022+
BGA
8000
SKHYNIX
23+
BGA
11400
优势原装现货假一赔十
海力士
22+23+
BGA
8000
新到现货,只做原装进口
SK HYNIX
两年内
NA
12
实单价格可谈

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