| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HZS3 | Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：56.36 Kbytes Page：7 Pages | RENESAS 瑞萨 |   | |
Diodes for Constant Voltage Support is limited to customers who have already adopted these products.\n\nThese diodes are suitable for supply voltage stabilization of small power supplies as well as reference voltage detection and surge absorption. | RENESAS 瑞萨 | | ||
Silicon Planar Zener Diode for Low Noise Application Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide | RENESAS 瑞萨 | | ||
Silicon Planar Zener Diode for Low Noise Application Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide | RENESAS 瑞萨 | | ||
Silicon Planar Zener Diode for Low Noise Application Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide | RENESAS 瑞萨 | | ||
Silicon Planar Zener Diode for Low Noise Application Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide | RENESAS 瑞萨 | | ||
Silicon Planar Zener Diode for Low Noise Application Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide | RENESAS 瑞萨 | | ||
Silicon Planar Zener Diode for Low Noise Application Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide | RENESAS 瑞萨 | | ||
Silicon Planar Zener Diode for Low Noise Application Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide | RENESAS 瑞萨 | | ||
Silicon Planar Zener Diode for Low Noise Application Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide | RENESAS 瑞萨 | | ||
Silicon Planar Zener Diode for Low Noise Application Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide | RENESAS 瑞萨 | | ||
Silicon Planar Zener Diode for Low Noise Application Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide | RENESAS 瑞萨 | | ||
SILICON EPITAXIAL PLANER ZENER DIODES SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | SEMTECH_ELEC 先之科半导体 | | ||
SILICON EPITAXIAL PLANER ZENER DIODES SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | SEMTECH_ELEC 先之科半导体 | | ||
SILICON EPITAXIAL PLANER ZENER DIODES SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | SEMTECH_ELEC 先之科半导体 | | ||
Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise Features • Vz-Iz characteristics are semilogarithmic linear from IZ = 1nA to 1mA and have sharper breakdown knees in a low current region, and also lower VZ temperature coefficients . • Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zen | RENESAS 瑞萨 | | ||
SILICON EPITAXIAL PLANER ZENER DIODES SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | SEMTECH_ELEC 先之科半导体 | | ||
SILICON EPITAXIAL PLANER ZENER DIODES SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | SEMTECH_ELEC 先之科半导体 | | ||
SILICON EPITAXIAL PLANER ZENER DIODES SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | SEMTECH_ELEC 先之科半导体 | | ||
Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise Features • Vz-Iz characteristics are semilogarithmic linear from IZ = 1nA to 1mA and have sharper breakdown knees in a low current region, and also lower VZ temperature coefficients . • Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zen | RENESAS 瑞萨 | | ||
SILICON EPITAXIAL PLANER ZENER DIODES SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | SEMTECH_ELEC 先之科半导体 | | ||
SILICON EPITAXIAL PLANER ZENER DIODES SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | SEMTECH_ELEC 先之科半导体 | | ||
SILICON EPITAXIAL PLANER ZENER DIODES SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | SEMTECH_ELEC 先之科半导体 | | ||
Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise Features • Vz-Iz characteristics are semilogarithmic linear from IZ = 1nA to 1mA and have sharper breakdown knees in a low current region, and also lower VZ temperature coefficients . • Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zen | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise Features • Vz-Iz characteristics are semilogarithmic linear from IZ = 1nA to 1mA and have sharper breakdown knees in a low current region, and also lower VZ temperature coefficients . • Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zen | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
ZENER DIODES 文件：176.48 Kbytes Page：3 Pages | EIC | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：56.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：56.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
稳压二极管 | STMICROELECTRONICS 意法半导体 | | ||
稳压二极管 | STMICROELECTRONICS 意法半导体 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：56.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：56.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
ZENER DIODES 文件：100.3 Kbytes Page：3 Pages | EIC | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：56.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
ZENER DIODES 文件：176.48 Kbytes Page：3 Pages | EIC | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：56.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：56.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：56.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
ZENER DIODES 文件：100.3 Kbytes Page：3 Pages | EIC | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：57.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | |
HZS3产品属性
- 类型
描述
- VZT_Min(V)：
28.2
- VZT_Max(V)：
29.6
- VZT_IZT(mA)：
2
- ZZT_(Ω) @IZT：
100
- Package Outline：
DO-34
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
25+ |
DO-34 |
90000 |
全新原装现货 |
|||
RENESAS |
23+ |
DO-34 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
2511 |
DO-34 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS |
25+23+ |
New |
37454 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENESAS/瑞萨 |
23+ |
20000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
HITACHI/日立 |
25+ |
TP |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
2447 |
DO-34 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS/瑞萨 |
23+ |
DO-34 |
50000 |
全新原装正品现货,支持订货 |
|||
Rochester |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
HITACHI |
06+ |
原厂原装 |
7061 |
只做全新原装真实现货供应 |
HZS3规格书下载地址
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- HZS3.6NB2
- HZS3.6NB1
- HZS3.3NB4
- HZS3.3NB3
- HZS3.3NB2
- HZS3.3NB1
- HZS3.0NB4
- HZS3.0NB3
- HZS3.0NB2
- HZS3.0N-B1(TD)
- HZS3.0NB1
- HZS2LL
- HZS2CLL
- HZS2C3
- HZS2C2
- HZS2C1
- HZS2BLL
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- HZS2B2
- HZS2B1TA-E-Q
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- HZS2ALL
- HZS2A3
- HZS2A2
- HZS2A1
- HZS27NB4
- HZS27NB3
- HZS27NB2
- HZS27NB1
- HZS27L
- HZS273
- HZS272
- HZS271
- HZS27
- HZS24L
- HZS243
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