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HZS302

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

文件:56.36 Kbytes Page:7 Pages

RENESAS

瑞萨

HZS302

稳压二极管

STMICROELECTRONICS

意法半导体

SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES • Surge overload rating—50 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O • Reliable low

PANJIT

強茂

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 600 Volts CURRENT - 3.0 Amperes)

SUPERFAST RECOVERY RECTIFIERS VOLTAGE 50 to 800 Volts CURRENT 3.0 Ampere FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage.

PANJIT

強茂

HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)

High Efficiency Rectifiers

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(3.0A,20-60V)

MOSPEC

统懋

Direct Joint Type

文件:31.83 Kbytes Page:1 Pages

PANASONIC

松下

HZS302产品属性

  • 类型

    描述

  • VZT_Min(V):

    29.2

  • VZT_Max(V):

    30.6

  • VZT_IZT(mA):

    2

  • ZZT_(Ω) @IZT:

    100

  • Package Outline:

    DO-34

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