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HZM9.1NB价格
参考价格：￥0.0780
型号：HZM9.1NB1TR 品牌：HITACHI 备注：这里有HZM9.1NB多少钱，2026年最近7天走势，今日出价，今日竞价，HZM9.1NB批发/采购报价，HZM9.1NB行情走势销售排行榜，HZM9.1NB报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HZM9.1NB | Silicon Epitaxial Planar Zener Diode for Stabilizer Features • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. • MPAK Package is suitable for high density surface mounting and high speed assembly. | RENESAS 瑞萨 |   | |
HZM9.1NB | Silicon Epitaxial Planar Zener Diode for Stabilizer 文件：193.81 Kbytes Page：8 Pages | RENESAS 瑞萨 | | |
Silicon Epitaxial Planar Zener Diode for Stabilizer Features • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. • MPAK Package is suitable for high density surface mounting and high speed assembly. | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilizer Features • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. • MPAK Package is suitable for high density surface mounting and high speed assembly. | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilizer Features • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. • MPAK Package is suitable for high density surface mounting and high speed assembly. | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilizer 文件：193.81 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilizer 文件：193.81 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilizer 文件：193.81 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (400 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV. FEATURES | NEC 瑞萨 | | ||
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (150 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, thus making its | NEC 瑞萨 | | ||
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (200 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, thus making its | NEC 瑞萨 | | ||
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (200 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, thus making its | NEC 瑞萨 | | ||
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode [NEC] SEMICONDUCTOR SELECTION GUIDE | NEC 瑞萨 | |
HZM9.1NB产品属性
- 类型
描述
- 型号
HZM9.1NB
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon Epitaxial Planar Zener Diode for Stabilizer
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2016+ |
SOT23 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS |
23+ |
07+PB |
20000 |
全新原装假一赔十 |
|||
RENESAS |
20+ |
SOT23 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
23+ |
SOT-23 |
1526000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
RENESAS |
05+ |
SOT23 |
3400 |
全新原装进口自己库存优势 |
|||
HITACHI |
24+ |
SOT-3497&NBS |
6500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
HITACHI |
25+ |
NA |
42486 |
专做原装正品,假一罚百! |
|||
HITACHI/日立 |
2450+ |
SOT-23 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
22+ |
SOT-23 |
20000 |
公司只做原装 品质保障 |
|||
Hitachi |
25+23+ |
34356 |
绝对原装正品全新进口深圳现货 |
HZM9.1NB规格书下载地址
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