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RD9.1JS

DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode

[NEC] SEMICONDUCTOR SELECTION GUIDE

NEC

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RD9.1JS

Diodes for Constant Voltage

Support is limited to customers who have already adopted these products.\n\nThese diodes are suitable for supply voltage stabilization of small power supplies as well as reference voltage detection and surge absorption.

RENESAS

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RD9.1JS

SILICON ZENER DIODES

文件:66.54 Kbytes Page:3 Pages

EIC

Zener Diodes

分立

EIC

Zener Diodes

分立

EIC

SILICON ZENER DIODES

文件:39.2 Kbytes Page:3 Pages

EIC

SILICON ZENER DIODES

文件:39.2 Kbytes Page:3 Pages

EIC

SILICON ZENER DIODES

文件:39.2 Kbytes Page:3 Pages

EIC

SILICON ZENER DIODES

文件:39.2 Kbytes Page:3 Pages

EIC

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (400 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV. FEATURES

NEC

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ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (150 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, thus making its

NEC

瑞萨

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (200 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, thus making its

NEC

瑞萨

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (200 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, thus making its

NEC

瑞萨

RD9.1JS产品属性

  • 类型

    描述

  • VZ@IZT(V):

    9.1

  • IZT(mA):

    5

  • ZZT@IZT(Ω):

    30

  • ZZK@IZK(Ω):

    60

  • IZK(mA):

    0.5

  • IR@VR(µA):

    0.5

  • IR@VR(V):

    6

更新时间:2026-5-18 13:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
25+
DO34
90000
全新原装现货
NEC
23+
DO34
50000
全新原装正品现货,支持订货
Rochester
25+
电联咨询
7800
公司现货,提供拆样技术支持
NEC
25+
DO34
10000
全新原装现货库存

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