位置:首页 > IC中文资料第6633页 > HZ4B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HZ4B | Zener Diodes Zener Diodes VZ : 2.0 - 36V PD : 500mW Features Low leakage, low zener impedance Maximum power dissipation of 500 mW Ideally suitedfor stabilized power supply, etc. Pb/ RoHS Free Case: DO-35 Glass Case Weight: approx. 0.13g Mechanical Data | LUGUANG 鲁光电子 | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | RENESAS 瑞萨 | |||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. | HITACHIHitachi Semiconductor 日立日立公司 | |||
Silicon Planar Zener Diode for Stabilized Power Supply FEATURES Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.6 V through 38 V of zener voltage provides flexible application. | SECOS 喜可士 | |||
SILICON EPITAXIAL PLANER ZENER DIODES for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | SEMTECH_ELEC 先之科半导体 | |||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | RENESAS 瑞萨 | |||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. | HITACHIHitachi Semiconductor 日立日立公司 | |||
SILICON EPITAXIAL PLANER ZENER DIODES for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | SEMTECH_ELEC 先之科半导体 | |||
Silicon Planar Zener Diode for Stabilized Power Supply FEATURES Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.6 V through 38 V of zener voltage provides flexible application. | SECOS 喜可士 | |||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | RENESAS 瑞萨 | |||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. | HITACHIHitachi Semiconductor 日立日立公司 | |||
Silicon Planar Zener Diode for Stabilized Power Supply FEATURES Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.6 V through 38 V of zener voltage provides flexible application. | SECOS 喜可士 | |||
SILICON EPITAXIAL PLANER ZENER DIODES for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | SEMTECH_ELEC 先之科半导体 | |||
Silicon Epitaxial Planar Zener Diodes 文件:92.39 Kbytes Page:4 Pages | DGNJDZ 南晶电子 | |||
Glass-Encapsulate Diodes 文件:385.79 Kbytes Page:4 Pages | HOTTECH 合科泰 | |||
Silicon Epitaxial Planar Zener Diodes 文件:92.39 Kbytes Page:4 Pages | DGNJDZ 南晶电子 | |||
Glass-Encapsulate Diodes 文件:385.79 Kbytes Page:4 Pages | HOTTECH 合科泰 | |||
3.9V,500mW,Zener Diodes | GALAXY 银河微电 | |||
Silicon Epitaxial Planar Zener Diodes 文件:92.39 Kbytes Page:4 Pages | DGNJDZ 南晶电子 | |||
Glass-Encapsulate Diodes 文件:385.79 Kbytes Page:4 Pages | HOTTECH 合科泰 | |||
稳压二极管 | STMICROELECTRONICS 意法半导体 | |||
Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise 文件:49.22 Kbytes Page:5 Pages | RENESAS 瑞萨 |
HZ4B产品属性
- 类型
描述
- 型号
HZ4B
- 制造商
LUGUANG
- 制造商全称
Shenzhen Luguang Electronic Technology Co., Ltd
- 功能描述
Zener Diodes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
2223+ |
DO-35 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ST |
24+ |
DO-35 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
HITACHISE |
25+ |
DO35 |
10000 |
全新原装现货库存 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
2023+ |
DO-35 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
HIT |
23+ |
DO-35 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
Renesas |
21+ |
标准封装 |
17891 |
进口原装,订货渠道! |
|||
RENESAS |
2019 |
0.5W3.9V |
28000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
25+ |
2500 |
公司现货库存 |
||||
RENESAS |
23+ |
DIP |
5000 |
原装正品,假一罚十 |
HZ4B规格书下载地址
HZ4B参数引脚图相关
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- HZ5B1
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- HZ5.1BP
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- HZ4C1(TD-E)
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- HZ4B3(E)
- HZ4B3
- HZ4B2(E)
- HZ4B2
- HZ4B1(TD-E)
- HZ4B1
- HZ4ALL
- HZ4A3(E)
- HZ4A3
- HZ4A2(TD-E)
- HZ4A2
- HZ4A1(E)
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- HZ4.7CP
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- HZ4.3CP
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- HZ4(H)
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- HZ3C2
- HZ3C1-E
- HZ3C1
- HZ3BLL
- HZ3B3
- HZ3B2
- HZ3B1
- HZ3ALL
- HZ3A3
- HZ3A2
HZ4B数据表相关新闻
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DdatasheetPDF页码索引
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