位置：首页 > IC中文资料 > HY62C256P-C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
32K x 8-BIT CMOS SRAM 文件：376.47 Kbytes Page：11 Pages | Hynix 海力士 |   | ||
32K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM | ISSI 矽成半导体 | | ||
32K X 8 LOW POWER CMOS STATIC RAM
| ICSI | | ||
32K x 8 LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSIs high performance, low power CMOS technology. WhenCSis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CM | ISSI 矽成半导体 | | ||
32K x 8 LOW POWER CMOS STATIC RAM 文件：625.84 Kbytes Page：12 Pages | ISSI 矽成半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
22+ |
DIP8 |
8000 |
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25+ |
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3629 |
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HYNIX |
2023+ |
SOJ |
50000 |
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HYNIX/海力士 |
2025+ |
DIP |
876 |
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HITACHI/日立 |
21+ |
DIP |
10000 |
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25+ |
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3200 |
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8650 |
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23+24 |
DIP- |
9680 |
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ST |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
HYUNDAI |
1922+ |
SMD |
8200 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
HY62C256P-C规格书下载地址
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DdatasheetPDF页码索引
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