位置：首页 > IC中文资料第5689页 > HY57V6516
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 |   | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM | Hynix 海力士 | |
HY57V6516产品属性
- 类型
描述
- 型号
HY57V6516
- 功能描述
x16 SDRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYUNDAI |
23+ |
TSOP-54 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
HYUNDAI |
23+ |
TSSOP |
809 |
全新原装正品现货,支持订货 |
|||
Hynix |
24+ |
TSSOP-56 |
5000 |
全新原装正品,现货销售 |
|||
HYNIX |
0013TP/QX |
TSOP-54 |
82 |
只做原装,现货库存 |
|||
Hynix |
24+ |
TSSOP-56 |
8000 |
新到现货，只做全新原装正品 |
|||
HYNIX |
TSOP |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
HY |
23+ |
TSOP-54 |
3940 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
HYUNDAI |
25+ |
TSOP |
2987 |
绝对全新原装现货供应! |
|||
HYUNDAI |
25+ |
42 |
公司优势库存 热卖中! |
||||
HYUNDAI |
23+ |
TSSOP |
50000 |
全新原装正品现货,支持订货 |
HY57V6516芯片相关品牌
HY57V6516规格书下载地址
HY57V6516参数引脚图相关
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- HY57V651620BLTC-75
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HY57V6516数据表相关新闻
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2019-4-21
DdatasheetPDF页码索引
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