DESCRIPTION

The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16.

FEATURES

• Single 3.3±0.3V power supplyNote)

• All device pins are compatible with LVTTL interface

• JEDEC standard 400mil 54 pin TSOP-II with 0.8mm of pin pitch

• All inputs and outputs referenced to positive edge of system clock

• Data mask function by UDQM or LDQM

• Internal four banks operation

• Auto refresh and self refresh

• 4096 refresh cycles/64ms

• Programmable Burst Length and Burst Type

-1, 2, 4, 8 or Full page for Sequential Burst

-1, 2, 4 or 8 for Interleave Burst

• Programmable CAS Latency; 2, 3 Clocks