位置：首页 > IC中文资料第6955页 > HY57V561620T-H
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V561620T-H | 4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | HYNIX 海力士 |   | |
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | HYNIX 海力士 | | ||
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | HYNIX 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HYNIX 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HYNIX 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HYNIX 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | HYNIX 海力士 | |
HY57V561620T-H产品属性
- 类型
描述
- 型号
HY57V561620T-H
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4Banks x 4M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
1134+ |
TSOP54 |
1079 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HY |
TSOP54 |
0734+ |
4600 |
全新原装进口自己库存优势 |
|||
HYNIX/海力士 |
22+ |
TSOP54 |
100000 |
代理渠道/只做原装/可含税 |
|||
HYNIX/海力士 |
2026+ |
TSOP54 |
54658 |
百分百原装现货 实单必成 |
|||
HYN |
24+/25+ |
779 |
原装正品现货库存价优 |
||||
HYNIX |
23+ |
TSOP |
1600 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
HYNIX |
2450+ |
TSOP54 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
HYUNDAI |
2025+ |
TSOP |
3625 |
全新原厂原装产品、公司现货销售 |
|||
ALLIANCE |
18+ |
TSOP |
85600 |
保证进口原装可开17%增值税发票 |
|||
HYNIX |
2016+ |
TSOP |
8880 |
只做原装,假一罚十,公司可开17%增值税发票! |
HY57V561620T-H芯片相关品牌
HY57V561620T-H规格书下载地址
HY57V561620T-H参数引脚图相关
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HY57V561620T-H数据表相关新闻
HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
2020-1-13HY604808
HY604808，全新原装当天发货或门市自取0755-82732291.
2019-12-12HY57V561620FTP-HI公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY57V641620ETP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY57V561620FTP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY3912W
HY3912W，全新原装当天发货或门市自取0755-82732291.
2019-2-25
DdatasheetPDF页码索引
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