位置：首页 > IC中文资料第6955页 > HY57V561620T-H
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V561620T-H | 4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 |   | |
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 | | ||
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |
HY57V561620T-H产品属性
- 类型
描述
- 型号
HY57V561620T-H
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4Banks x 4M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYUNDAI |
2023+ |
SMD |
16802 |
安罗世纪电子只做原装正品货 |
|||
ST/意法 |
23+ |
TSOP48 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
HYUNDAI |
2025+ |
TSOP |
3625 |
全新原厂原装产品、公司现货销售 |
|||
ALLIANCE |
18+ |
TSOP |
85600 |
保证进口原装可开17%增值税发票 |
|||
ICS |
23+ |
NA |
3500 |
全新原装假一赔十 |
|||
HYNIX |
2016+ |
TSOP |
8880 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
HYNIX/海力士 |
21+ |
TSOP |
10000 |
原装现货假一罚十 |
|||
HYNIX |
24+ |
NA/ |
3405 |
原装现货,当天可交货,原型号开票 |
|||
HYNIX/海力士 |
2022+ |
TSOP54 |
3000 |
原厂代理 终端免费提供样品 |
|||
HYNIX |
25+ |
TSOP54 |
15000 |
一级代理原装现货 |
HY57V561620T-H芯片相关品牌
HY57V561620T-H规格书下载地址
HY57V561620T-H参数引脚图相关
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HY57V561620T-H数据表相关新闻
HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
2020-1-13HY604808
HY604808，全新原装当天发货或门市自取0755-82732291.
2019-12-12HY57V561620FTP-HI公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY57V561620FTP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY3912W
HY3912W，全新原装当天发货或门市自取0755-82732291.
2019-2-25
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