位置:首页 > IC中文资料第5852页 > HY57V161610DTC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V161610DTC | SDRAM - 16Mb | HYNIX 海力士 | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM | HYNIX 海力士 | |||
SDRAM - 16Mb | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | HYNIX 海力士 | |||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operati | HYNIX 海力士 |
HY57V161610DTC产品属性
- 类型
描述
- 功能描述:
1Mx16
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX/海力士 |
2425+ |
TSOP |
18800 |
只做原装正品,每一片都来自原厂 |
|||
HY |
26+ |
TQFP-100 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
HYNIX |
26+ |
TSOP-50 |
360000 |
只做原装,请来电咨询 |
|||
HY/华羿微 |
23+ |
TO-247 |
20000 |
||||
HY/华羿微 |
25+ |
TO-247 |
10000 |
公司原装现货一片起送靠谱 |
|||
HY |
22+ |
SOP-8 |
5000 |
只做原装鄙视假货15118075546 |
|||
FEELING |
25+ |
SOP8 |
2518 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
HY原装 |
25+23+ |
DIP-4 |
27167 |
绝对原装正品全新进口深圳现货 |
|||
HY |
25+ |
BGA |
9630 |
我们只做原装正品现货!量大价优! |
|||
HY |
25+ |
SOP |
98900 |
原厂原装正品现货!! |
HY57V161610DTC芯片相关品牌
HY57V161610DTC规格书下载地址
HY57V161610DTC参数引脚图相关
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