位置：首页 > IC中文资料第6984页 > HY57V161610E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V161610E | 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 |   | |
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operati | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono | Hynix 海力士 | |
HY57V161610E产品属性
- 类型
描述
- 型号
HY57V161610E
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
2 Banks x 512K x 16 Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX/海力士 |
21+ |
TSOP |
10000 |
原装现货假一罚十 |
|||
NNNIX |
0421+ |
SSOP |
1430 |
普通 |
|||
hynix |
06+ |
TSOP |
185 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HYNIX/海力士 |
24+ |
NA/ |
3367 |
原装现货,当天可交货,原型号开票 |
|||
SKHYNIX/海力士 |
25+ |
TSOP |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
HY |
05+ |
TSSOP5 |
3300 |
全新原装进口自己库存优势 |
|||
SKHYNIX/海力士 |
25+ |
TSOP50 |
32360 |
SKHYNIX/海力士全新特价HY57V161610ET-7即刻询购立享优惠#长期有货 |
|||
HYNIX |
24+/25+ |
2880 |
原装正品现货库存价优 |
||||
HYINX |
24+ |
TSSOP50 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
HYNIX |
2430+ |
TSOP50 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
HY57V161610E芯片相关品牌
HY57V161610E规格书下载地址
HY57V161610E参数引脚图相关
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- HY57V161610DTC-I
- HY57V161610DTC-8
- HY57V161610DTC-7I
- HY57V161610DTC-7
- HY57V161610DTC7
- HY57V161610DTC-6I
- HY57V161610DTC-6
- HY57V161610DTC-55I
- HY57V161610DTC-55
- HY57V161610DTC-5
- HY57V161610DTC-15
- HY57V161610DTC-10I
- HY57V161610DTC-10
- HY57V161610DTC
- HY57V161610D-I
- HY57V161610D
- HY57V161610BTC-10
- HY57V161610ATC-15
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- HY57V161610ATC-10
- HY-5610
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- HY4N60D
- HY4903P
- HY4903B
- HY46XX
- HY4504W
- HY4504P
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