位置：首页 > IC中文资料第6984页 > HY57V161610E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V161610E | 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | HYNIX 海力士 |   | |
HY57V161610E | 2 Banks x 512K x 16 Bit Synchronous DRAM | HYNIX 海力士 | | |
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operati | HYNIX 海力士 | | ||
SDRAM - 16Mb | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | HYNIX 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono | HYNIX 海力士 | |
HY57V161610E产品属性
- 类型
描述
- 型号
HY57V161610E
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
2 Banks x 512K x 16 Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
2016+ |
TSOP |
5000 |
全新原装现货,只售原装,假一赔十! |
|||
LT |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
SKHYNIX/海力士 |
25+ |
TSOP50 |
32360 |
SKHYNIX/海力士全新特价HY57V161610ET-7即刻询购立享优惠#长期有货 |
|||
HYNIX |
2430+ |
TSOP50 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HY |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
HYNIX |
24+/25+ |
850 |
原装正品现货库存价优 |
||||
HYNIX |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
HYNIX |
25+ |
91 |
全新原装!优势库存热卖中! |
||||
HYINX |
24+ |
TSOP |
73200 |
全新原装现货特价销售,欢迎来电查询 |
|||
HYNIX/海力士 |
2425+ |
TSOP |
18800 |
只做原装正品,每一片都来自原厂 |
HY57V161610E芯片相关品牌
HY57V161610E规格书下载地址
HY57V161610E参数引脚图相关
- iot
- igzo
- igbt驱动电路
- IGBT模块
- id卡
- ic元器件
- ic元件
- ic型号
- ic行业
- ic网
- ic市场
- ic设计
- ic交易
- ic厂家
- ic查询
- IC插座
- ic测试
- ic采购
- IC(集成电路)
- hynix
- HY8N65T
- HY8N50T
- HY86-12
- HY860F
- HY7-P
- HY7N80T
- HY-7110
- HY6N60T
- HY6410
- HY6340
- HY6330
- HY6264A
- HY6264
- HY6116A
- HY-61
- HY6060W
- HY-60
- HY5V52F
- HY5-P
- HY5N50T
- HY57V16161TC-13
- HY57V16161TC-10
- HY57V161610ETP-I
- HY57V161610ETP-7I
- HY57V161610ETP-7
- HY57V161610ET-I
- HY57V161610ET-8I
- HY57V161610ET-8
- HY57V161610ET-7I
- HY57V161610ET-7
- HY57V161610ET-6I
- HY57V161610ET-6
- HY57V161610ET-5I
- HY57V161610ET-55I
- HY57V161610ET-55
- HY57V161610ET-5
- HY57V161610ET-15I
- HY57V161610ET-15
- HY57V161610ET-10I
- HY57V161610ET-10
- HY57V161610DTC-I
- HY57V161610DTC-8
- HY57V161610DTC-7I
- HY57V161610DTC-7
- HY57V161610DTC7
- HY57V161610DTC-6I
- HY57V161610DTC-6
- HY57V161610DTC-55I
- HY57V161610DTC-55
- HY57V161610DTC-5
- HY57V161610DTC-15
- HY57V161610DTC-10I
- HY57V161610DTC-10
- HY57V161610DTC
- HY57V161610D-I
- HY57V161610D
- HY57V161610BTC-10
- HY57V161610ATC-15
- HY57V161610ATC-12
- HY57V161610ATC-10
- HY-5610
- HY-53
- HY5204W
- HY5204A
- HY5110W
- HY5110A
- HY50-P
- HY50P
- HY4N70T
- HY4N70M
- HY4N70D
- HY4N65T
- HY4N65D
- HY4N60T
- HY4N60D
- HY4903P
- HY4903B
- HY46XX
- HY4504W
- HY4504P
HY57V161610E数据表相关新闻
HY3208
HY3208 ，全新原装当天发货或门市自取0755-82732291.
2019-9-24HY3208P
HY3208P ，全新原装当天发货或门市自取0755-82732291.
2019-9-24HY57V561620FTP-HI公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY57V641620ETP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY57V561620FTP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY3912W
HY3912W，全新原装当天发货或门市自取0755-82732291.
2019-2-25
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
