Variable Capacitance Diode for VHF tuner

Features • Low voltage type (tuning voltage 1 to 10V), it is suitable for ET without DC/DC converter. • High capacitance ratio (n = 11.0 min). • Low series resistance and good C-V linearity. • Ultra small Flat Package (UFP) is suitable for surface mount design.

Variable Capacitance Diode for VHF tuner

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Diodes>Variable Capacitance

Variable Capacitance Diode for VHF tuner

文件：52.24 Kbytes Page：5 Pages

Variable Capacitance Diode for VHF tuner

文件：52.24 Kbytes Page：5 Pages

Variable Capacitance Diode for VHF tuner

文件：52.24 Kbytes Page：5 Pages

Amplifier Transistors(PNP)

丝印代码：C327；PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: BC337. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: JC337. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

Silicon NPN Transistor Power Amp, Switch

Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: ● High Collector–Emitter Sustaining Voltage ● High DC Current Gain ● Low Collector–Emitter Saturation Voltage ● Fast Switching Time