位置：首页 > IC中文资料第4126页 > HUFA75309D3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HUFA75309D3 | 19A,55V,0.070Ohm,N-ChannelUltraFETPowerMOSFETs TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET®process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
19A,55V,0.070Ohm,N-ChannelUltraFETPowerMOSFETs TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET®process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
19A,55V,0.070Ohm,N-ChannelUltraFETPowerMOSFETs TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET®process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
19A,55V,0.070Ohm,N-ChannelUltraFETPowerMOSFETs TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET™process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
19A,55V,0.070Ohm,N-ChannelUltraFETPowerMOSFETs TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET®process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
19A,55V,0.070Ohm,N-ChannelUltraFETPowerMOSFETs TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET™process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
HUFA75309D3产品属性
- 类型
描述
- 型号
HUFA75309D3
- 功能描述
MOSFET 19a 55V N-Channel UltraFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
TO-252 |
9062 |
支持大陆交货,美金交易。原装现货库存。 |
|||
FAIRCHILD/仙童 |
23+ |
TO-251 |
6000 |
原装正品，支持实单 |
|||
Fairchild/ON |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD |
08+(pbfree) |
TO-251 |
8866 |
||||
FAIRCHILD |
21+ |
SOT252 |
50000 |
全新原装正品现货,支持订货 |
|||
isc |
2024 |
IPAK/TO-251 |
2500 |
国产品牌isc,可替代原装 |
|||
Fairchild/ON |
21+ |
TO2513 Short Leads IPak TO251A |
13880 |
公司只售原装,支持实单 |
|||
23+ |
N/A |
46280 |
正品授权货源可靠 |
||||
FAIRCHILD |
2019 |
TO-252-2 |
55000 |
原装正品现货假一赔十 |
|||
FSC/ON |
23+ |
原包装原封□□ |
4157 |
原装进口特价供应QQ1304306553更多详细咨询库存 |
HUFA75309D3芯片相关品牌
HUFA75309D3规格书下载地址
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HUFA75309D3数据表相关新闻
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2021-11-9HV111-浪涌限制器/断路器/热交换控制器IC
特点无需外接部件董事会80V，2AMOSFET没有Rsense的需要±8.0V至±80V的输入电压范围二级电流限制1.2A初始浪涌电流极限2.0A二浪涌电流极限/断路器触发伺服TOC限制1.2A，然后关闭快速响应电流限制时，在输入电压过电流或步骤（如二极管OR'ing）UVLO/启用与上电复位监控电路可编程欠压锁定过电流保护9.0sec自动重试内置滞后热关机80V漏
2013-1-6HV100-3针热插拔，浪涌电流限制器控制器
特点33％，比SOT-232的小型通行证元素是唯一的外部部分没有意义的电阻自动适应*通元短路保护*紫外线和POR监控电路2.5S自动重试±10V至±72V输入电压范围0.6毫安典型工作电源电流内置交流干扰路径打开钳应用-48V局端交换（线卡）+48V的服务器网络+48V的存储区域网络+48V的外围设备，路由器，交换机+2
2013-1-6
DdatasheetPDF页码索引
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