位置：首页 > IC中文资料第4126页 > HUFA75309D3S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HUFA75309D3S | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
HUFA75309D3S | N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | Bychip 百域芯 | | |
19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | Bychip 百域芯 | | ||
19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | |
HUFA75309D3S产品属性
- 类型
描述
- 型号
HUFA75309D3S
- 功能描述
MOSFET 19a 55V N-Channel UltraFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
3750 |
原装现货,当天可交货,原型号开票 |
|||
FAIRCHILD |
20+ |
SOT252 |
500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
4157 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
FAIRCHILD |
25+23+ |
TO252 |
23633 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
FAIRCHILD |
25+ |
TO-252 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
FAIRCHILD |
24+ |
TO252 |
75000 |
||||
onsemi(安森美) |
24+ |
TO-252 |
9062 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Fairchild/ON |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD |
05+ |
原厂原装 |
6016 |
只做全新原装真实现货供应 |
|||
FAIRCHIL |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
HUFA75309D3S芯片相关品牌
HUFA75309D3S规格书下载地址
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HUFA75309D3S数据表相关新闻
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2021-11-9HV100-3针热插拔，浪涌电流限制器控制器
特点 33％，比SOT- 232的小型 通行证元素是唯一的外部部分 没有意义的电阻 自动适应*通元 短路保护* 紫外线和POR监控电路 2.5S自动重试 ±10V至±72V输入电压范围 0.6毫安典型工作电源电流 内置交流干扰路径打开钳 应用 - 48V局端交换（线卡） +48 V的服务器网络 +48 V的存储区域网络 +48 V的外围设备，路由器，交换机 +2
2013-1-6HV111-浪涌限制器/断路器/热交换控制器IC
特点 无需外接部件 董事会80V，2A MOSFET 没有Rsense的需要 ± 8.0V至± 80V的输入电压范围 二级电流限制 1.2A初始浪涌电流极限 2.0A二浪涌电流极限/断路器触发伺服TOC限制1.2A，然后关闭 快速响应电流限制时，在输入电压过电流或步骤（如二极管OR'ing） UVLO /启用与上电复位监控电路 可编程欠压锁定 过电流保护 9.0sec自动重试 内置滞后热关机 80V漏
2013-1-6
DdatasheetPDF页码索引
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