位置：首页 > IC中文资料第156页 > HUF76121S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 |   | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | Intersil | | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | RENESAS 瑞萨 | | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | RENESAS 瑞萨 | | ||
8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | RENESAS 瑞萨 | | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
Power Rocker Switches 文件：461.66 Kbytes Page：11 Pages | Panasonic 松下 | | ||
Power Rocker Switches 文件：461.66 Kbytes Page：11 Pages | Panasonic 松下 | | ||
47A, 30V, 0.021 OHM, N-CHANNEL, LOGIC LEVEL ULTRAFET POWER MOSFETS 文件：979.99 Kbytes Page：7 Pages | SUNTAC | |
HUF76121S产品属性
- 类型
描述
- 型号
HUF76121S
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS/哈里斯 |
24+ |
NA/ |
10200 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
onsemi(安森美) |
25+ |
D2PAK(TO-263) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
HARRIS |
2016+ |
TO-263 |
1800 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FAIRCHILD/仙童 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD |
24+ |
TO-263 |
2000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
4000 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
FAIRCHILD |
08+ |
SOP8 |
3300 |
全新原装现货绝对自己公司特价库 |
|||
FAIRCHILD |
25+ |
DIP-40 |
18000 |
原厂直接发货进口原装 |
|||
FAIRCHILD/仙童 |
02+ |
TO-263 |
880000 |
明嘉莱只做原装正品现货 |
|||
INTERSIL |
2450+ |
SO-8 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
HUF76121S芯片相关品牌
HUF76121S规格书下载地址
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2019-4-22HV100-3针热插拔，浪涌电流限制器控制器
特点 33％，比SOT- 232的小型 通行证元素是唯一的外部部分 没有意义的电阻 自动适应*通元 短路保护* 紫外线和POR监控电路 2.5S自动重试 ±10V至±72V输入电压范围 0.6毫安典型工作电源电流 内置交流干扰路径打开钳 应用 - 48V局端交换（线卡） +48 V的服务器网络 +48 V的存储区域网络 +48 V的外围设备，路由器，交换机 +2
2013-1-6
DdatasheetPDF页码索引
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