位置：首页 > IC中文资料第156页 > HUF76121D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 |   | ||
20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | Bychip 百域芯 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | Bychip 百域芯 | | ||
20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | RENESAS 瑞萨 | | ||
20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | ONSEMI 安森美半导体 | | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
Power Rocker Switches 文件：461.66 Kbytes Page：11 Pages | Panasonic 松下 | | ||
Power Rocker Switches 文件：461.66 Kbytes Page：11 Pages | Panasonic 松下 | | ||
47A, 30V, 0.021 OHM, N-CHANNEL, LOGIC LEVEL ULTRAFET POWER MOSFETS 文件：979.99 Kbytes Page：7 Pages | SUNTAC | |
HUF76121D产品属性
- 类型
描述
- 型号
HUF76121D
- 功能描述
MOSFET 20a 30V N-Ch Logic Level 0.023Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
FAIRCHILD |
2025+ |
TO-252 |
4835 |
全新原厂原装产品、公司现货销售 |
|||
HARRIS |
24+ |
TO-252 |
59200 |
新进库存/原装 |
|||
INTERSL |
22+ |
SOT-252 |
20000 |
公司只做原装 品质保障 |
|||
FAIRCHILD/仙童 |
2517+ |
TO252 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD |
03+ |
TO-252 |
2450 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAI |
06+ |
TO252/2 |
5000 |
原装现货海量库存欢迎咨询 |
|||
FAIRCHILD |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
FAIRCHILD/仙童 |
2022+ |
SOT252 |
29880 |
原厂代理 终端免费提供样品 |
|||
FAIRCHILD |
NEW |
TO-252 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
HUF76121D芯片相关品牌
HUF76121D规格书下载地址
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2019-4-22HV100-3针热插拔，浪涌电流限制器控制器
特点 33％，比SOT- 232的小型 通行证元素是唯一的外部部分 没有意义的电阻 自动适应*通元 短路保护* 紫外线和POR监控电路 2.5S自动重试 ±10V至±72V输入电压范围 0.6毫安典型工作电源电流 内置交流干扰路径打开钳 应用 - 48V局端交换（线卡） +48 V的服务器网络 +48 V的存储区域网络 +48 V的外围设备，路由器，交换机 +2
2013-1-6
DdatasheetPDF页码索引
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