型号 功能描述 生产厂家 企业 LOGO 操作
HUF75631SK8

5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve

FAIRCHILD

仙童半导体

HUF75631SK8

5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve

INTERSIL

HUF75631SK8

5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET

RENESAS

瑞萨

HUF75631SK8

5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET

ONSEMI

安森美半导体

5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve

FAIRCHILD

仙童半导体

HUF75631SK8产品属性

  • 类型

    描述

  • 型号

    HUF75631SK8

  • 功能描述

    MOSFET USE 512-FDS3682

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-2-1 17:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
26+
DIP-40
890000
一级总代理商原厂原装大批量现货 一站式服务
FAIRCHILD/仙童
10+P
SO-8
4900
深圳原装进口无铅现货
FAIRCHILD
25+23+
NA
13931
绝对原装正品全新进口深圳现货
FAIRCILD
22+
SO-8
8000
原装正品支持实单
F
25+
SOP
3200
全新原装、诚信经营、公司现货销售
24+
SOP8
115
FAIRCHILO
2016+
SOP8
4996
只做原装,假一罚十,公司可开17%增值税发票!
FSC
17+
SOP-8
6200
FAIRCHILD
26+
TO-263D2-PAK
86720
全新原装正品价格最实惠 假一赔百
原厂
23+
SOIC-8
5000
原装正品,假一罚十

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