HUF75321D价格

参考价格:¥2.1146

型号:HUF75321D3ST 品牌:Fairchild 备注:这里有HUF75321D多少钱,2025年最近7天走势,今日出价,今日竞价,HUF75321D批发/采购报价,HUF75321D行情走势销售排行榜,HUF75321D报价。
型号 功能描述 生产厂家 企业 LOGO 操作

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Intersil

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Fairchild

仙童半导体

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Fairchild

仙童半导体

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Intersil

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Fairchild

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

Bychip

百域芯

MOSFET N-CH 55V 20A IPAK

ONSEMI

安森美半导体

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

ONSEMI

安森美半导体

N-Channel 6 0-V (D-S) MOSFET

文件:988.87 Kbytes Page:6 Pages

VBSEMI

微碧半导体

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Fairchild

仙童半导体

35A, 55V, 0.034 Ohm, N-Channel UltraFET er MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Fairchild

仙童半导体

N-Channel 60-V (D-S) MOSFET

文件:896.86 Kbytes Page:6 Pages

VBSEMI

微碧半导体

HUF75321D产品属性

  • 类型

    描述

  • 型号

    HUF75321D

  • 功能描述

    MOSFET 20a 55V N-Channel UltraFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-30 9:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ONSEMI/安森美
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
FAIRCHILD/仙童
TO252
23+
6000
原装现货有上库存就有货全网最低假一赔万
FAIRCHILD
14+
SOT-252
59
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Fairchild(飞兆/仙童)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
FAIRCHILD
TO252
9850
一级代理 原装正品假一罚十价格优势长期供货
三年内
1983
只做原装正品
仙童
06+
TO-252
12000
原装
FAIRCHILD
1709+
SOT-252
32500
普通
VBSEMI/微碧半导体
24+
TO252
7800
全新原厂原装正品现货,低价出售,实单可谈
FSC/ON
23+
原包装原封 □□
38374
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存

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