HT6017 M0核/128K Flash MCU

HT6X1X系列MCU，专为国家新一代智能电表应用而开发。内核采用了在尺寸、功耗、及能效方面高度优化的ARM Cortex-M0处理器，同时配以128K Flash、8K SRAM、电源及复位管理、时钟管理、温度传感器、硬件自动温补RTC、LCD驱动等丰富IP，产品在功能、性能及可靠性方面皆满足国家电网对MCU器件的高工规要求。 \n\n 该系列MCU除特别适用于国家电网的表计系统外，也适合于其它对集成度、可靠性、待机功耗、RTC精度等有极高要求的工业控制、终端电子消费品等应用场合。相对于传统的8bit/16bit工控MCU，该系列则具备更为突出的综合性价比及平台化优势。\n\n ·工作电压范围：2.2V ~ 5.5V\n·工作温度范围：-40°C ~ 85°C;

HT6X1X User Manual

文件：1.96007 Mbytes Page：161 Pages

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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionall

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：60.52 Kbytes Page：4 Pages