HT6015 M0核/128K Flash MCU

HT6X1X系列MCU，专为国家新一代智能电表应用而开发。内核采用了在尺寸、功耗、及能效方面高度优化的ARM Cortex-M0处理器，同时配以128K Flash、8K SRAM、电源及复位管理、时钟管理、温度传感器、硬件自动温补RTC、LCD驱动等丰富IP，产品在功能、性能及可靠性方面皆满足国家电网对MCU器件的高工规要求。 \n\n 该系列MCU除特别适用于国家电网的表计系统外，也适合于其它对集成度、可靠性、待机功耗、RTC精度等有极高要求的工业控制、终端电子消费品等应用场合。相对于传统的8bit/16bit工控MCU，该系列则具备更为突出的综合性价比及平台化优势。\n\n ·工作电压范围：2.2V ~ 5.5V\n·工作温度范围：-40°C ~ 85°C;

HT6X1X User Manual

文件：1.96007 Mbytes Page：161 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fas

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout • Fas

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip