Surface Mount Microwave Schottky Detector Diodes Tape and Reel Options Available

文件：430.21 Kbytes Page：18 Pages

Surface Mount Microwave Schottky Detector Diodes

文件：430.21 Kbytes Page：18 Pages

Surface Mount Microwave Schottky Detector Diodes

文件：430.21 Kbytes Page：18 Pages

Surface Mount Microwave Schottky Detector Diodes

文件：430.21 Kbytes Page：18 Pages

高频检波二极管

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：RF DIODE SCHOTTKY 4V SOT363 分立半导体产品 二极管 - 射频

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：RF DIODE SCHOTTKY 4V SOT363 分立半导体产品 二极管 - 射频

Schottky Barrier Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

General Description The HMC286 & HMC286E are low cost Low Noise Amplifi ers (LNA) for 2.3 to 2.5 GHz spread spectrum applications. The LNA provides 19 dB of gain and a 1.7 dB noise fi gure from a single positive +3V power supply that consumes only 8.5mA. The typical output 1 dB compression po

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

DC-6000 MHZ CASCADABLE GAAS HBT MMIC AMPLIFIER

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