8 Amp Schottky Rectifier

8 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • 175 °C Junction Temperature • High Current Capability • VRRM 25 to 45 Volts • Surface mount package

封装/外壳：DO-215AB，SMC 鸥翼 包装：管件 描述：DIODE SCHOTTKY 35V 8A DO215AB 分立半导体产品 二极管 - 整流器 - 单

Si Schottky Rectifier Diodes

Si Schottky Rectifier Diodes

封装/外壳：DO-214AB，SMC 包装：卷带（TR） 描述：DIODE SCHOTTKY 35V 8A DO214AB 分立半导体产品 二极管 - 整流器 - 单

Schottky surface mount rectifier

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. This state of the art d

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

LMC835 Digital Controlled Graphic Equalizer

文件：474.13 Kbytes Page：18 Pages

LMC835 Digital Controlled Graphic Equalizer

文件：474.13 Kbytes Page：18 Pages