PNP EPITAXIAL PLANAR TRANSISTOR

The HSA1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

TO-92 Bipolar Transistor

功率电阻器：铝壳体，HSA

CGS HS, Chassis Mount Resistors, Power Resistor, 36.5 x 21 x 11 mm, 2 Termination, Loose Piece - Tray, 5% Chassis Mount Resistor Tolerance, Wirewound

Aluminium Housed Power Resistors

TE Connectivity are the leading European supplier of standard and custom designed aluminium housed resistors for general-purpose use, power supplies, power generation and the traction industry. The HS is a range of extremely stable, high quality wire wound resistors capable of dissipating high pow

功率电阻器：铝壳体，HSA

CGS HS, Chassis Mount Resistors, Power Resistor, 36.5 x 21 x 11 mm, 2 Termination, Loose Piece - Tray, 5% Chassis Mount Resistor Tolerance, Wirewound

封装/外壳：轴向，盒 包装：散装 描述：RES CHAS MNT 15K OHM 5% 16W 电阻器 底座安装电阻器

封装/外壳：轴向，盒 包装：散装 描述：RES CHAS MNT 15 OHM 5% 16W 电阻器 底座安装电阻器

Photo Interrupters

Photo Interrupters Overview CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices