HS6013晶体管资料
HS6013别名：HS6013三极管、HS6013晶体管、HS6013晶体三极管
HS6013生产厂家：美国通用电器公司_SEM
HS6013制作材料：Si-PNP
HS6013性质：通用型 （Uni）_低噪放大 （ra）
HS6013封装形式：直插封装
HS6013极限工作电压：50V
HS6013最大电流允许值：0.8A
HS6013最大工作频率：<1MHZ或未知
HS6013引脚数：3
HS6013最大耗散功率：0.7W
HS6013放大倍数：β>250
HS6013图片代号：A-23
HS6013vtest：50
HS6013htest：999900
- HS6013atest：0.8
HS6013wtest：0.5
HS6013代换 HS6013用什么型号代替：2N6010,2N6011,2N6012,2N6013,2N6014,2N6015,2N6016,2N6017,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW |   | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | | ||
Silicon Industrial Rectifier 20 Amp Description: The NTE6013 is a 20 Ampere (RMS) silicon rectifier in an electrically isolated TO220 type package with a voltage rating of 600V for use in common anode or common cathode circuits. This device features a glass–passivated junction to ensure long term reliability and stability. In add | NTE | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATP |
06+ |
TO-264 |
200 |
原装库存 |
|||
26+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MICROSEMI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
IR |
23+ |
TO-252 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
APT |
26+ |
模块 |
3562 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
APT |
2015 |
模块 |
300 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
APT |
22+ |
TO-3PL |
8000 |
原装正品支持实单 |
|||
APT |
23+ |
模块 |
900 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
24+ |
8866 |
||||||
APT |
25+ |
4 |
公司优势库存 热卖中!! |
HS6013规格书下载地址
HS6013参数引脚图相关
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HS6013数据表相关新闻
HS3001
HS3001
2023-6-13HS6T24SA 拇指操纵杆，2 - 轴 数字（机械开关） 输出
HS6T24SA
2023-3-20HS6222
HS6222,红外遥控编码电电路，当天发货0755-82732291全新原装现货或门市自取.
2020-9-14HS6221
HS6221,红外遥控编码电电路，当天发货0755-82732291全新原装现货或门市自取.
2020-9-14HS4-3282-8 原装 特价销售
原装现货 欢迎咨询！
2020-6-4HS-4423BRH-抗辐射双通道，逆变电源的MOSFET驱动器
抗辐射双通道，逆变电源MOSFET驱动器 辐射硬化的Hs4423RH和房协，4423BRH是反转，双通道，单片高速MOSFET驱动器设计的高电流转换为TTL电平信号在电压高达18V的输出。这些设备的投入是TTL兼容，可我们的房协直接驱动，1825ARH脉宽调制器或我们的加勒比国家联盟/青蒿素和HCS/ HCTS会类型的逻辑器件。快速崛起时间和高电流输出允许非常快速控制高功率MOSFET栅极电容，像我们的抗辐射FS055，在高频率的应用。高电流输出减少功率损耗通过快速的MOSFET栅极充电和放电电容。输出级采用了低电压锁出电路，放进一个三态模式输出当电源电压下降为低于10V房协
2013-3-3
DdatasheetPDF页码索引
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