型号 功能描述 生产厂家 企业 LOGO 操作

N CHANNEL ENHANCEMENT MODE POWER MOSFET

Power MOSFETs from Silicon Standardprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widelypreferred for commercialand industrial applications and suited for low voltage applications su

ETCList of Unclassifed Manufacturers

未分类制造商

Low Gate Charge Simple Drive Requirement

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applica

A-POWER

富鼎先进电子

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • DC/DC Conversion - System Power

VBSEMI

微碧半导体

Fast Switching Characteristic

文件:56.65 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-Channel 30-V (D-S) MOSFET

文件:959.97 Kbytes Page:8 Pages

VBSEMI

微碧半导体

更新时间:2025-11-3 15:28:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
23+
01
9079
原厂授权代理,海外优势订货渠道。可提供大量库存,详
AP/美商亚柏
25+
TO252
54648
百分百原装现货 实单必成 欢迎询价
INFINEON
23+
TO-251/252
7000
CMOS
25+
TO-251
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
24+
TO-263
14
SYFOREVER
25+
TO-220TO-252DFN5*6
20300
SYFOREVER原装特价40N03/80N03/100N03/150N03即刻询购立享优惠#长期有
Infineon
24+
TO-252
27500
原装正品,价格最低!
VBsemi
21+
TO252
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
F
22+
TO-251
6000
十年配单,只做原装
APEC/富鼎
2223+
TO-220
26800
只做原装正品假一赔十为客户做到零风险

HS40N03DA数据表相关新闻

  • HS3001

    HS3001

    2023-6-13
  • HS2264A-R4

    HS2264A-R4,当天发货0755-82732291全新原装现货或门市自取.

    2020-10-1
  • HS6221

    HS6221,红外遥控编码电电路,当天发货0755-82732291全新原装现货或门市自取.

    2020-9-14
  • HS4-3282-8 原装 特价销售

    原装现货 欢迎咨询!

    2020-6-4
  • HS2241P

    HS2241P,全新原装当天发货或门市自取0755-82732291.

    2019-3-11
  • HS-4423BRH-抗辐射双通道,逆变电源的MOSFET驱动器

    抗辐射双通道,逆变电源MOSFET驱动器 辐射硬化的Hs4423RH和房协,4423BRH是反转,双通道,单片高速MOSFET驱动器设计的高电流转换为TTL电平信号在电压高达18V的输出。这些设备的投入是TTL兼容,可我们的房协直接驱动,1825ARH脉宽调制器或我们的加勒比国家联盟/青蒿素和HCS/ HCTS会类型的逻辑器件。快速崛起时间和高电流输出允许非常快速控制高功率MOSFET栅极电容,像我们的抗辐射FS055,在高频率的应用。高电流输出减少功率损耗通过快速的MOSFET栅极充电和放电电容。输出级采用了低电压锁出电路,放进一个三态模式输出当电源电压下降为低于10V房协

    2013-3-3