位置:首页 > IC中文资料第1908页 > HS210A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HS210A | Hermetically Sealed, Precision 文件:236.08 Kbytes Page:1 Pages | OHMITE | ||
HS210A | Available in 4-terminal on HS500 series 文件:190.76 Kbytes Page:1 Pages | OHMITE | ||
Hermetically Sealed Precision Ultra-High Stability Axial Terminals 文件:97.26 Kbytes Page:1 Pages | OHMITE | |||
Hermetically Sealed Precision Ultra-High Stability Axial Terminals 文件:97.26 Kbytes Page:1 Pages | OHMITE | |||
Hermetically Sealed Precision Ultra-High Stability Axial Terminals 文件:97.26 Kbytes Page:1 Pages | OHMITE | |||
Hermetically Sealed Precision Ultra-High Stability Axial Terminals 文件:97.26 Kbytes Page:1 Pages | OHMITE | |||
Hermetically Sealed Precision Ultra-High Stability Axial Terminals 文件:97.26 Kbytes Page:1 Pages | OHMITE | |||
Hermetically Sealed Precision Ultra-High Stability Axial Terminals 文件:97.26 Kbytes Page:1 Pages | OHMITE | |||
Hermetically Sealed Precision Ultra-High Stability Axial Terminals 文件:97.26 Kbytes Page:1 Pages | OHMITE | |||
Hermetically Sealed Precision Ultra-High Stability Axial Terminals 文件:97.26 Kbytes Page:1 Pages | OHMITE | |||
Hermetically Sealed Precision Ultra-High Stability Axial Terminals 文件:97.26 Kbytes Page:1 Pages | OHMITE | |||
Hermetically Sealed Precision Ultra-High Stability Axial Terminals 文件:97.26 Kbytes Page:1 Pages | OHMITE | |||
SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc | MOTOROLA 摩托罗拉 | |||
5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High | MOTOROLA 摩托罗拉 | |||
POWER RECTIFIERS(2.0A,500-1000V) Surface Mount Ultrafast Power Rectifiers Ideally suite for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. | MOSPEC 统懋 | |||
POWER RECTIFIERS(2.0A,500-1000V)
| MOSPEC 统懋 | |||
Voltage Follower 文件:348.91 Kbytes Page:16 Pages | NSC 国半 |
HS210A产品属性
- 类型
描述
- 型号
HS210A
- 制造商
Ohmite Mfg Co
- 功能描述
WIREWOUND RESISTOR
HS210A芯片相关品牌
HS210A规格书下载地址
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HS210A数据表相关新闻
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抗辐射高频半桥驱动 该辐射2100RH硬化HS是一个高频率,半桥100V的N沟道MOSFET驱动器IC,这是一个功能,引脚到引脚Intersil的HIP2500更换和行业标准2110种。低端和 高边栅极驱动器可以独立控制。这给出了在死区时间选择用户最大的灵活性和驱动程序的协议。此外,该器件具有片上错误检测和校正电路,可监控的高端的状态闩锁并比较它的显信号。如果他们不同意,一设置或复位脉冲生成正确的高侧闩锁。此功能保护的高一边,从特修斯闩锁。在高侧欠压供应部队,何低。当这返回一个有效的供应电压,议员将前往国家显。在低侧电源欠压部队既劳和HO低。当该供应变得有效,劳返
2013-3-3
DdatasheetPDF页码索引
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