Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting

The HS-1135RH is a radiation hardened, high speed, low power current feedback amplifier built with Intersil’s proprietary complementary bipolar UHF-1 (DI bonded wafer) process. They are QML approved and processed in full compliance with MIL-PRF-38535. This amplifier features user programmable outp

Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting

Features ▪ Electrically Screened to SMD #5962-96767 ▪ QML Qualified per MIL-PRF-38535 Requirements ▪ User Programmable Output Voltage Limiting ▪ Fast Overdrive Recovery:

带 VIO 调节的电流反馈放大器

The HS-1135RH is a radiation hardened, high speed, low power current feedback amplifier built with Intersil's proprietary complementary bipolar UHF-1 (DI bonded wafer) process. They are QML approved and processed in full compliance with MIL-PRF-38535. This amplifier features user programmable output • Electrically Screened to SMD # 5962-96767 \n• QML Qualified per MIL-PRF-38535 Requirements \n• User Programmable Output Voltage Limiting \n• Fast Overdrive Recovery;

Radiation Hardened, High Speed, Low Power Current Feedback Amplifier

文件：258.54 Kbytes Page：9 Pages

Radiation Hardened, High Speed, Low Power Current Feedback Amplifier

文件：258.54 Kbytes Page：9 Pages

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages