Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting

The HS-1135RH is a radiation hardened, high speed, low power current feedback amplifier built with Intersil’s proprietary complementary bipolar UHF-1 (DI bonded wafer) process. They are QML approved and processed in full compliance with MIL-PRF-38535. This amplifier features user programmable outp

Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting

Features ▪ Electrically Screened to SMD #5962-96767 ▪ QML Qualified per MIL-PRF-38535 Requirements ▪ User Programmable Output Voltage Limiting ▪ Fast Overdrive Recovery:

Radiation Hardened, High Speed, Low Power Current Feedback Amplifier

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带 VIO 调节的电流反馈放大器

Radiation Hardened, High Speed, Low Power Current Feedback Amplifier

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PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

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