Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting

The HS-1135RH is a radiation hardened, high speed, low power current feedback amplifier built with Intersil’s proprietary complementary bipolar UHF-1 (DI bonded wafer) process. They are QML approved and processed in full compliance with MIL-PRF-38535. This amplifier features user programmable outp

Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting

Features ▪ Electrically Screened to SMD #5962-96767 ▪ QML Qualified per MIL-PRF-38535 Requirements ▪ User Programmable Output Voltage Limiting ▪ Fast Overdrive Recovery:

带 VIO 调节的电流反馈放大器

Radiation Hardened, High Speed, Low Power Current Feedback Amplifier

文件：258.54 Kbytes Page：9 Pages

Radiation Hardened, High Speed, Low Power Current Feedback Amplifier

文件：258.54 Kbytes Page：9 Pages

AM Tuner System for Car Radios and Home Stereos

Overview The LA1135 is a high-performance AM electronic tuner IC that is greatly improved in cross modulation characteristics. It is especially suited for use in car radio and home stereo (antenna: loop) applications. Features • Excellent cross modulation characteristics: Meets the requirements

AM Tuner System for Car Radios and Home Stereos

Overview The LA1135 is a high-performance AM electronic tuner IC that is greatly improved in cross modulation characteristics. It is especially suited for use in car radio and home stereo (antenna: loop) applications. Features • Excellent cross modulation characteristics: Meets the requirements

Integrated Circuit High Gain Audio Preamp

Features: • Power Supply with Wide Working Voltage Range • High Open–Loop Gain • Extremely Low Distortion • Low Noise • High Input Impedance and Low Output Impedance • Low Current Dissipation Applications: • Car Stereos • Tape Recorders

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. ■ 470 MHz ■ 12.5 VOLTS ■ EFFICIENCY 60 ■ COMMON EMITTER ■ POUT = 5

18-27.5 GHz 1W Power Amplifier

Key Features • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA • On-chip power detector diode Primary Applications • Point-to-Point Radio • Point-to-Multipoint Communications • Ka Ban