650VN-ChannelPlanarMOSFET

Features RDSON≤12Ω@Vgs=10V,Id=0.5A UltraLowgateCharge(typicaltypical5.7nC) Crss(typicaltypical0.87pF) Fastswitchingcapability %avalanchetested Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply(UPS) PowerFactorCorrection(

GOLDBONDEDDIODES

[VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime

1.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC1N65isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinthehighspeedswitchingapplicationsofpo

N-CHANNELMOSFET

DESCRIPTION 1N601N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu

DrainCurrentID=1.2A@TC=25C

·FEATURES •DrainCurrentID=1.2A@TC=25℃ •DrainSourceVoltage-:VDSS=650V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=12.5Ω(Max) •FastSwitching ·APPLICATIONS •Switchingpowersupplies,converters,ACandDCmotorcontrols

N-CHANNELPOWERMOSFET

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