| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | PHILIPS 飞利浦 |   | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | PHILIPS 飞利浦 | | ||
Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Features ● Compact construction ● No setting efforts ● Polyc | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Battery power unit 文件：123.15 Kbytes Page：24 Pages | PHILIPS 飞利浦 | | ||
Battery power unit 文件：123.15 Kbytes Page：24 Pages | PHILIPS 飞利浦 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
26+ |
SOT-143 |
12000 |
原装，正品 |
|||
恩XP |
2023+ |
SOT-143 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
恩XP |
06+ |
SOT-143 |
15000 |
||||
恩XP |
04+ |
SOT-143 |
510 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
22+ |
SOT143R |
9000 |
原厂渠道,现货配单 |
|||
恩XP |
24+ |
SOT-143 |
5000 |
全新原装正品,现货销售 |
|||
恩XP |
18+ |
SOT-143 |
85600 |
保证进口原装可开17%增值税发票 |
|||
恩XP |
23+24 |
SOD523 |
136800 |
专业经营原装MOS管,二极管.三极管TVS瞬变抑制 |
|||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
恩XP |
25+ |
SOT-143 |
8000 |
只有原装 |
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