GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER

文件：1.0091 Mbytes Page：16 Pages

封装/外壳：模具 包装：带 描述：IC MMIC AMP 2W DIE RF/IF，射频/中频和 RFID 射频放大器

GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER

产品选型表 产品技术资料帮助 ADI公司所提供的资料均视为准确、可靠。但本公司不为用户在应用过程中侵犯任何专利权或第三方权利承担任何责任。技术指标的修改不再另行通知。本公司既没有含蓄的允许，也不允许借用ADI公司的专利或专利权的名义。本文出现的商标和注册商标所有权分别属于相应的公司。

GaAs pHEMT MMIC 2 W功率放大器，DC - 22 GHz

封装/外壳：32-LFQFN 裸露焊盘，CSP 包装：带 描述：IC AMP GP 0HZ-22GHZ 32LFCSP-CAV RF/IF，射频/中频和 RFID 射频放大器

GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER

文件：1.43068 Mbytes Page：14 Pages

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz

Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz

IC intended for use as a PWM controller

文件：30.91 Kbytes Page：6 Pages

Silicon N-channel dual-gate MOS-FETs

文件：114.27 Kbytes Page：12 Pages