GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz

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Low Noise Amplifier

文件：214 Kbytes Page：13 Pages

封装/外壳：模具 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF AMP GP 6GHZ-18GHZ DIE RF/IF，射频/中频和 RFID 射频放大器

GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz

低噪声放大器，采用SMT封装，6 - 18 GHz

GaAs、pHEMT、MMIC、低噪声放大器，6 GHz至17 GHz

GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz

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MMIC, Low Noise Amplifier

文件：281.9 Kbytes Page：13 Pages

MMIC, Low Noise Amplifier

文件：281.9 Kbytes Page：13 Pages

封装/外壳：16-VFQFN 裸露焊盘 包装：托盘 描述：IC RF AMP GP 6GHZ-17GHZ 16QFN RF/IF，射频/中频和 RFID 射频放大器

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• Typical application (220V mains unless otherwise specified) • Integrated antisaturation and protection network • According to tube impedance 120V AC mains 277V AC mains 340V AC mains As PFC 220V AC mains Suffix D = Integrated free-wheeling diode ST preferred products in bol

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• Typical application (220V mains unless otherwise specified) • Integrated antisaturation and protection network • According to tube impedance 120V AC mains 277V AC mains 340V AC mains As PFC 220V AC mains Suffix D = Integrated free-wheeling diode ST preferred products in bol

3.5 W 890 to 915 MHz RF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, operate from a 7.2 volt supply and require 1.0 mW (MHW903 /953) or 100 mW (MHW954) of RF input power. •

1:6 PCI CLOCK GENERATOR/ FANOUT BUFFER

The MPC903, MPC904 and MPC905 are six output clock generation devices targeted to provide the clocks required in a 3.3V or 5.0V PCI environment. The device operates from a 3.3V supply and can interface to either a TTL input or an external crystal. The inputs to the device can be driven with 5.0V w

Integrated Circuit Operational Amplifier

Description: The NTE903 is an operational amplifier in a 12–Lead TO5 type metal can having all the desirable features and chatacteristics of its prototypes plus a lower noise figure and improved characteristics for offset voltage, offset current, bias current, and impedance. Typical Applications