GaAs MMIC SPDT SWITCH, DC - 3 GHz

General Description The HMC545 and HMC545E are low-cost SPDT switches in 6-lead SOT26 plastic packages for use in general switching applications which require very low insertion loss and very small size. With 0.25 dB typical loss, these devices can control signals from DC to 3.0 GHz and are espec

SPDT开关，采用SMT封装，DC - 3 GHz

HMC545(E)是一款低成本SPDT开关，采用6引脚SOT26塑料封装，适合要求极低插入损耗和极小尺寸的通用开关应用。 这些器件具有0.25 dB的典型损耗，可控制频率范围为DC至3.0 GHz的信号，尤其适合IF和RF应用，包括蜂窝/3G、ISM、汽车和笔记本电脑。 该设计提供出色的插入损耗性能，非常适合滤波器和接收机开关应用。 “关断”状态下，RF1和RF2反射短路。 两个控制电压所需的直流电流非常小，并与CMOS和一些TTL逻辑系列兼容。\n\n• 蜂窝/3G基础设施\n\n• 专用移动无线手机 \n\n• WLAN、WiMAX和WiBro \n\n• 汽车远程信息系统\n\n• 测试 • 低插入损耗： 0.25 dB \n\n• 高输入IP3： +65 dBm \n\n• 低直流功耗;

GaAs MMIC SPDT SWITCH, DC - 3 GHz

文件：199.85 Kbytes Page：6 Pages

GaAs MMIC SPDT开关，DC - 3 GHz

HMC545A和HMC545AE均为低成本SPDT开关，采用6引脚SOT26塑料封装，适用于要求极低插入损耗和极小尺寸的通用开关应用。 这些器件具有0.25 dB的典型损耗，可控制频率范围为DC至3.0 GHz的信号，尤其适合IF和RF应用，包括蜂窝/3G、ISM、汽车和笔记本电脑。 该设计提供出色的插入损耗性能，非常适合滤波器和接收机开关应用。 “关断”状态下，RF1和RF2反射短路。 两个控制电压所需的直流电流非常小，并与CMOS和一些TTL逻辑系列兼容。 • 低插入损耗： 0.27 dB \n\n• 高输入IP3： +54 dBm \n\n• 低直流功耗;

GaAs MMIC SPDT SWITCH, DC - 3 GHz

General Description The HMC545 and HMC545E are low-cost SPDT switches in 6-lead SOT26 plastic packages for use in general switching applications which require very low insertion loss and very small size. With 0.25 dB typical loss, these devices can control signals from DC to 3.0 GHz and are espec

GaAs MMIC SPDT SWITCH, DC - 3 GHz

文件：199.85 Kbytes Page：6 Pages

丝印代码：H545A；GaAs MMIC SPDT SWITCH, DC - 3 GHz

文件：341.68 Kbytes Page：6 Pages

封装/外壳：SOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SPDT 3GHZ SOT26 RF/IF，射频/中频和 RFID 射频开关

封装/外壳：SOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SPDT 3GHZ SOT26 RF/IF，射频/中频和 RFID 射频开关

丝印代码：545AE；GaAs MMIC SPDT SWITCH, DC - 3 GHz

文件：341.68 Kbytes Page：6 Pages

GaAs MMIC SPDT SWITCH, DC - 3 GHz

文件：199.85 Kbytes Page：6 Pages

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

丝印代码：20-；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

丝印代码：21*；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

丝印代码：22*；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-