22.5° MMIC 4位数字移相器，8 - 12 GHz

封装/外壳：24-TFCQFN 裸露焊盘 功能：相移 包装：管件 描述：PHASE SHIFTERTRANSFER RF/IF，射频/中频和 RFID RF 其它 IC 和模块

丝印代码：H543A；22.5째 MMIC 4-BIT DIGITAL PHASE SHIFTER, 8 - 12 GHz

文件：726.78 Kbytes Page：7 Pages

封装/外壳：24-TFCQFN 裸露焊盘 功能：相移 包装：托盘 描述：RF IC DIGITAL PHASE SHIFTER RF/IF，射频/中频和 RFID RF 其它 IC 和模块

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

UHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices a