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BD543晶体管资料
BD543别名：BD543三极管、BD543晶体管、BD543晶体三极管
BD543生产厂家：美国得克萨斯仪表公司
BD543制作材料：Si-NPN
BD543性质：低频或音频放大 （LF）_功率放大 （L）
BD543封装形式：直插封装
BD543极限工作电压：40V
BD543最大电流允许值：8A
BD543最大工作频率：<1MHZ或未知
BD543引脚数：3
BD543最大耗散功率：70W
BD543放大倍数：
BD543图片代号：B-10
BD543vtest：40
BD543htest：999900
- BD543atest：8
BD543wtest：70
BD543代换 BD543用什么型号代替：BD595,BD705,BD743,BD805,3DD66B,
BD543价格
参考价格：￥39.2107
型号：BD5431EFS-E2 品牌：Rohm 备注：这里有BD543多少钱，2025年最近7天走势，今日出价，今日竞价，BD543批发/采购报价，BD543行情走势销售排行榜，BD543报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BD543 | NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available | POINN Power Innovations Ltd |   | |
BD543 | Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type BD544/A/B/C • 8 A continuous collector current • 10 A peak Collector current | SAVANTIC | | |
BD543 | Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type BD544/A/B/C • 8 A continuous collector current • 10 A peak Collector current | ISC 无锡固电 | | |
BD543 | NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available | Bourns 伯恩斯 | | |
BD543 | Silicon NPN Power Transistors DESCRIPTION • 70 W at 25°C CaseTemperature • Complement to Type BD544/A/B/C • 8 A Continuous Collector Current APPLICATIONS • Designed for high power audio amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
BD543 | Silicon NPN Power Transistors 文件：100.82 Kbytes Page：3 Pages | SAVANTIC | | |
BD543 | NPN SILICON POWER TRANSISTORS 文件：87.9 Kbytes Page：4 Pages | Bourns 伯恩斯 | | |
Silicon NPN Power Transistors DESCRIPTION • 70 W at 25°C CaseTemperature • Complement to Type BD544/A/B/C • 8 A Continuous Collector Current APPLICATIONS • Designed for high power audio amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available | Bourns 伯恩斯 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type BD544/A/B/C • 8 A continuous collector current • 10 A peak Collector current | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type BD544/A/B/C • 8 A continuous collector current • 10 A peak Collector current | ISC 无锡固电 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available | POINN Power Innovations Ltd | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available | POINN Power Innovations Ltd | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available | Bourns 伯恩斯 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type BD544/A/B/C • 8 A continuous collector current • 10 A peak Collector current | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type BD544/A/B/C • 8 A continuous collector current • 10 A peak Collector current | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • 70 W at 25°C CaseTemperature • Complement to Type BD544/A/B/C • 8 A Continuous Collector Current APPLICATIONS • Designed for high power audio amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • 70 W at 25°C CaseTemperature • Complement to Type BD544/A/B/C • 8 A Continuous Collector Current APPLICATIONS • Designed for high power audio amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type BD544/A/B/C • 8 A continuous collector current • 10 A peak Collector current | SAVANTIC | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available | Bourns 伯恩斯 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available | POINN Power Innovations Ltd | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type BD544/A/B/C • 8 A continuous collector current • 10 A peak Collector current | ISC 无锡固电 | | ||
Silicon monolithic integrated circuits 文件：340.9 Kbytes Page：5 Pages | ROHM 罗姆 | | ||
Silicon monolithic integrated circuits 文件：159.5 Kbytes Page：5 Pages | ROHM 罗姆 | | ||
Silicon monolithic integrated circuits 文件：159.5 Kbytes Page：5 Pages | ROHM 罗姆 | | ||
NPN SILICON POWER TRANSISTORS 文件：87.9 Kbytes Page：4 Pages | Bourns 伯恩斯 | | ||
Silicon NPN Power Transistors 文件：100.82 Kbytes Page：3 Pages | SAVANTIC | | ||
NPN SILICON POWER TRANSISTORS 文件：87.9 Kbytes Page：4 Pages | Bourns 伯恩斯 | | ||
Silicon NPN Power Transistors 文件：100.82 Kbytes Page：3 Pages | SAVANTIC | | ||
NPN SILICON POWER TRANSISTORS 文件：87.9 Kbytes Page：4 Pages | Bourns 伯恩斯 | | ||
封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 80V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Silicon NPN Power Transistors 文件：100.82 Kbytes Page：3 Pages | SAVANTIC | | ||
NPN SILICON POWER TRANSISTORS 文件：87.9 Kbytes Page：4 Pages | Bourns 伯恩斯 | | ||
封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
TO-8 CASCADABLE AMPLIFIERS 文件：175.85 Kbytes Page：2 Pages | TELEDYNE 华特力科 | | ||
Limit Alarms (potentiometer adj.) A-UNIT 文件：132.75 Kbytes Page：4 Pages | MSYSTEM 爱模 | | ||
Limit Alarms (potentiometer adj.) A-UNIT 文件：132.75 Kbytes Page：4 Pages | MSYSTEM 爱模 | | ||
Limit Alarms (potentiometer adj.) A-UNIT 文件：132.75 Kbytes Page：4 Pages | MSYSTEM 爱模 | | ||
Limit Alarms (potentiometer adj.) A-UNIT 文件：132.75 Kbytes Page：4 Pages | MSYSTEM 爱模 | |
BD543产品属性
- 类型
描述
- 型号
BD543
- 功能描述
两极晶体管 - BJT 70W NPN Silicon
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
24+ |
SOP |
17860 |
公司现货库存,支持实单 |
|||
TI/德州仪器 |
24+ |
NA/ |
20000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PHIL |
25+ |
T0-220 |
10 |
原装正品,假一罚十! |
|||
TI |
24+/25+ |
83 |
原装正品现货库存价优 |
||||
1738+ |
TO-220 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
||||
BOURNS/伯恩斯 |
25+ |
220 |
860000 |
明嘉莱只做原装正品现货 |
|||
24+ |
TO-220 |
10000 |
全新 |
||||
BOURNS/伯恩斯 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
FAIRCHI |
21+ |
TO-220 |
12588 |
原装正品,自己库存 假一罚十 |
|||
BOURNSINC |
23+ |
TO-TO-220 |
912300 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
BD543芯片相关品牌
BD543规格书下载地址
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BD543数据表相关新闻
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DdatasheetPDF页码索引
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