丝印代码：HMC362；SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12 GHz

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丝印代码：HMC362；SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12 GHz

文件：541.51 Kbytes Page：6 Pages

GaAs HBT MMIC DIVIDE-BY-4, DC - 11.0 GHz

General Description The HMC362 is a low noise Divide-by-4 Static Divider with InGaP GaAs HBT technology that has a small size of 1.30 x 0.69 mm. This device operates from DC (with a square wave input) to 11 GHz input frequency with a single +5V DC supply. The low additive SSB phase noise of -14

GaAs HBT MMIC DIVIDE-BY-4, DC - 11 GHz

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GaAs HBT MMIC DIVIDE-BY-4, DC - 11 GHz

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Point-to-Point and Point-to-Multi-Point Radios

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Satellite Communication Systems

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包装：托盘 描述：RF POWER DIVIDER 0HZ-11GHZ RF/IF，射频/中频和 RFID RF 功率分配器/分线器

SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12.0 GHz

General Description The HMC362S8G & HMC362S8GE are low noise Divide-by-4 Static Dividers with InGaP GaAs HBT technology in 8 lead surface mount plastic packages. This device operates from DC (with a square wave input) to 12 GHz input frequency with a single +5V DC supply. The low additive S

GaAs HBT MMIC DIVIDE-BY-4, DC - 11 GHz

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GaAs HBT MMIC DIVIDE-BY-4, DC - 11 GHz

文件：200.12 Kbytes Page：6 Pages

InGaP HBT Divide-by-4 Chip, DC - 11 GHz

使用InGaP HBT技术，4分频，采用SMT封装，DC - 12 GHz

SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12 GHz

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SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12.0 GHz

文件：362.22 Kbytes Page：6 Pages

SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12 GHz

文件：240.17 Kbytes Page：6 Pages

SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12.0 GHz

文件：362.22 Kbytes Page：6 Pages

SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12 GHz

文件：240.17 Kbytes Page：6 Pages

SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12 GHz

文件：240.17 Kbytes Page：6 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 功能：除以 4 包装：托盘 描述：IC DIVIDER DC-12GHZ BY-4 8SMD RF/IF，射频/中频和 RFID RF 其它 IC 和模块

IGBT SIP MODULE Fast IGBT

Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow

Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n =3.0.min) • Good C-V linearity. • Ultra small Flat Package (UFP) is suitable for surface mount design.

B/W TV Horizontal Deflection Output

B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=150V • Collector Current : IC=5A • Collector Dissipation : PC=40W(TC=25°C)

NPN (B/W TV HORIZONTAL DEFLECTION OUTPUT)

B/W TV HORIZONTAL DEFLECTION OUTPUT • Collector-Base Voltage VCBO=150V • Collector Current IC=5A • Collector Dissipation PC=40W(TC=25°C)

NPN SILICON RF TRANSISTORS

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