NPN (B/W TV HORIZONTAL DEFLECTION OUTPUT)

B/W TV HORIZONTAL DEFLECTION OUTPUT • Collector-Base Voltage VCBO=150V • Collector Current IC=5A • Collector Dissipation PC=40W(TC=25°C)

B/W TV Horizontal Deflection Output

B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=150V • Collector Current : IC=5A • Collector Dissipation : PC=40W(TC=25°C)

B/W TV Horizontal Deflection Output

B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=150V • Collector Current : IC=5A • Collector Dissipation : PC=40W(TC=25°C)

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features High Collector-Base Voltage, High Collector Current. Applications B/W TV horizontal deflection output.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min) ·Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications.

B/W TV Horizontal Deflection Output

B/W TV Horizontal Deflection Output

B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=150V • Collector Current : IC=5A • Collector Dissipation : PC=40W(TC=25°C)

封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 70V 5A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 70V 5A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

IGBT SIP MODULE Fast IGBT

Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow

Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n =3.0.min) • Good C-V linearity. • Ultra small Flat Package (UFP) is suitable for surface mount design.

NPN SILICON RF TRANSISTORS

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