GaAs MMIC I/Q MIXER 5.9 - 12 GHz

General Description The HMC256 chip is a compact, 2.08 mm2, I/Q Mixer MMIC which can be used as an Image Reject Mixer (IRM) or Single Sideband (SSB) upconverter. The chip utilizes two standard Hittite double-balanced mixer cells and a Lange Coupler realized in GaAs MESFET technology. All data is

GaAs MMIC I/Q MIXER 5.9 - 12 GHz

General Description The HMC256 chip is a compact, 2.08 mm2, I/Q Mixer MMIC which can be used as an Image Reject Mixer (IRM) or Single Sideband (SSB) upconverter. The chip utilizes two standard Hittite double-balanced mixer cells and a Lange Coupler realized in GaAs MESFET technology. All data is

Test Instrumentation

General Description The HMC256 chip is a compact, 2.08 mm2, I/Q Mixer MMIC which can be used as an Image Reject Mixer (IRM) or Single Sideband (SSB) upconverter. The chip utilizes two standard Hittite double-balanced mixer cells and a Lange Coupler realized in GaAs MESFET technology. All data is

封装/外壳：模具 包装：散装 描述：IC MIXER MMIC I/Q GAAS DIE RF/IF，射频/中频和 RFID 射频混频器

I/Q混频器芯片，5.9 - 12 GHz

GaAs MMIC I/Q MIXER 5.9 - 12 GHz

文件：163.39 Kbytes Page：6 Pages

GaAs MMIC I/Q MIXER 5.9 - 12 GHz

General Description The HMC256 chip is a compact, 2.08 mm2, I/Q Mixer MMIC which can be used as an Image Reject Mixer (IRM) or Single Sideband (SSB) upconverter. The chip utilizes two standard Hittite double-balanced mixer cells and a Lange Coupler realized in GaAs MESFET technology. All data is

GaAs MMIC I/Q MIXER 5.9 - 12 GHz

文件：163.39 Kbytes Page：6 Pages

PNP video transistors

DESCRIPTION PNP video transistor in a SOT223 plastic package. NPN complements: BFQ236 and BFQ236A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATION

SMALL OUTLINE OPTOISOLATORS AC INPUT TRANSISTOR OUTPUT

The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the detection or monitoring of AC signals. These devices are constructe

Silicon NPN Transistor Darlington w/Damper Diode

Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)