双通道单刀双掷开关，DC - 2.5 GHz

DUAL SPDT SWITCH DC - 2.5 GHz

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DUAL SPDT SWITCH DC - 2.5 GHz

文件：310.53 Kbytes Page：6 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SPDT 2.5GHZ 8MSOP RF/IF，射频/中频和 RFID 射频开关

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：托盘 描述：IC RF SWITCH SPDT 2.5GHZ 8MSOP RF/IF，射频/中频和 RFID 射频开关

Low-leakage double diode

DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are connected in series. FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V •

Low-leakage double diode

DESCRIPTION Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package. The diodes are connected in series. FEATURES • Small plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8µs • Continuous reverse voltage: max. 75 V • Repeti

Silicon epitaxial planar type

Silicon epitaxial planar type For high voltage switching circuit ■ Features • High breakdown voltage: VR = 200 V • Short reverse recovery time trr • Small package, allowing automatic mounting

Silicon NPN Transistor Low Noise, High Gain Amplifier

Description: The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics.

Precision Reference

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